Researcher profile

Frederick Casper

Frederick Casper contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - UnverifiedVerification L1Unclaimed author
2works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2012arXiv

Topological insulators and thermoelectric materials

Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials have been theoretically predicted and experimentally observed. Currently known TI materials can possibly be classified into two families, the HgTe family and the Bi2Se family. The signatures found in the electronic structure of a TI also cause these materials to be excellent thermoelectric materials. On the other hand, excellent thermoelectric materials can be also topologically trivial. Here we present a short introduction to topological insulators and thermoelectrics, and give examples of compound classes were both good thermoelectric properties and topological insulators can be found.

preprint2011arXiv

The efficient spin injector scheme based on Heusler materials

We present the rational design scheme intended to provide the stable high spin-polarization at the interfaces of the magneto-resistive junctions by fulfilling the criteria of structural and chemical compatibilities at the interface. This can be realized by joining the semiconducting and half-metallic Heusler materials with similar structures. The present first-principal calculations verify that interface remains half-metallic if the nearest interface layers effectively form a stable Heusler material with the properties intermediate between the surrounding bulk parts. This leads to a simple rule for selecting the proper combinations.