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Researcher profile

François Ducastelle

François Ducastelle contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

5 published item(s)

preprint2021arXiv

Simulation of thermodynamic properties of magnetic transition metals from an efficient tight-binding model

Atomic scale simulations at finite temperature are an ideal approach to study the thermodynamic properties of magnetic transition metals. However, the development of interatomic potentials explicitly taking into account magnetic variables is a delicate task. In this context, we present a tight-binding model for magnetic transition metals in the Stoner approximation. This potential is integrated into a Monte Carlo structural relaxations code where trials of atomic displacements as well as fluctuations of local magnetic moments are performed to determine the thermodynamic equilibrium state of the considered systems. As an example, the Curie temperature of cobalt is investigated while showing the important role of atomic relaxations. Furthermore, our model is generalized to other transition metals highlighting a local magnetic moment distribution that varies with the gradual filling of the d states. Consequently, the successful validation of the potential for different magnetic configurations indicates its great transferability makes it a good choice for atomistic simulations sampling a large configuration space.

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preprint2020arXiv

The impact of stress on the electronic structure of phosphorus allotropes stacked on hexagonal boron nitride

We study the mechanical and electronic properties of heterobilayers composed of black phosphorus (BP) on hexagonal boron nitride (hBN) and of blue phosphorus (\Pblue) on hBN by means of ab-intio density functional theory. Emphasis is put on how the stress applied on the constituent layers impact their structural and electronic properties. For this purpose, we adopt a specific scheme of structural relaxation which allows us to distinguish between the energy cost of distorting each layer and the gain in stacking them together. In most cases we find that the BP tends to contract along the softer armchair direction, as already reported for similar structures. This contraction can attain up to 5\% of strain, which might deteriorate its very good transport properties along the armchair direction. To prevent this, we propose a twisted-bilayer configuration where the largest part of the stress applies on the zigzag axis, resulting in a lower impact on the transport properties of BP. We also investigated a \Pblue/hBN bilayer. A peculiar hybridization between the valence states of the two layers lets us suggest that electron-hole pairs excited in the bilayer will exhibit a mixed character, with electrons localized solely in the \Pblue{ }layer, and holes spread onto the two layers.

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preprint2013arXiv

Electronic structure of vacancy resonant states in graphene: a critical review of the single vacancy case

The resonant behaviour of vacancy states in graphene is well-known but some ambiguities remain concerning in particular the nature of the so-called zero energy modes. Other points are not completely elucidated in the case of low but finite vacancy concentration. In this article we concentrate on the case of vacancies described within the usual tight-binding approximation. More precisely we discuss the case of a single vacancy or of a finite number of vacancies in a finite or infinite system.

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preprint2011arXiv

Exciton and interband optical transitions in hBN single crystal

Near band gap photoluminescence (PL) of hBN single crystal has been studied at cryogenic temperatures with synchrotron radiation excitation. The PL signal is dominated by the D-series previously assigned to excitons trapped on structural defects. A much weaker S-series of self-trapped excitons at 5.778 eV and 5.804 eV has been observed using time-window PL technique. The S-series excitation spectrum shows a strong peak at 6.02 eV, assigned to free exciton absorption. Complementary photoconductivity and PL measurements set the band gap transition energy to 6.4 eV and the Frenkel exciton binding energy larger than 380 meV.

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preprint2010arXiv

Nickel assisted healing of defective graphene

The healing of graphene grown from a metallic substrate is investigated using tight-binding Monte Carlo simulations. At temperatures (ranging from 1000 to 2500 K), an isolated graphene sheet can anneal a large number of defects suggesting that their healing are thermally activated. We show that in presence of a nickel substrate we obtain a perfect graphene layer. The nickel-carbon chemical bonds keep breaking and reforming around defected carbon zones, providing a direct interaction, necessary for the healing. Thus, the action of Ni atoms is found to play a key role in the reconstruction of the graphene sheet by annealing defects.

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