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Francisco Dominguez-Adame

Francisco Dominguez-Adame appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat cond-mat.dis-nn cond-mat.mtrl-sci cond-mat.stat-mech nlin.PS physics.chem-ph

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preprint2019arXiv

Spin-polarized electron transmission in DNA-like systems

The helical distribution of the electronic density in chiral molecules, such as DNA and bacteriorhodopsin, has been suggested to induce a spin-orbit coupling interaction that may lead to the so-called chirality-induced spin selectivity (CISS) effect. Key ingredients for the theoretical modelling are, in this context, the helically shaped potential of the molecule and, concomitantly, a Rashba-like spin-orbit coupling due to the appearance of a magnetic field in the electron reference frame. Symmetries of these models clearly play a crucial role in explaining the observed effect, but a thorough analysis has been largely ignored in the literature. In this work, we present a study of these symmetries and how they can be exploited to enhance chiral-induced spin selectivity in helical molecular systems.

preprint2000arXiv

Multiparticle Biased DLA with surface diffusion: a comprehensive model of electrodeposition

We present a complete study of the Multiparticle Biased Diffusion-Limited Aggregation (MBDLA) model supplemented with surface difussion (SD), focusing on the relevance and effects of the latter transport mechanism. By comparing different algorithms, we show that MBDLA+SD is a very good qualitative model for electrodeposition in practically all the range of current intensities {\em provided} one introduces SD in the model in the proper fashion: We have found that the correct procedure involves simultaneous bulk diffusion and SD, introducing a time scale arising from the ratio of the rates of both processes. We discuss in detail the different morphologies obtained and compare them to the available experimental data with very satisfactory results. We also characterize the aggregates thus obtained by means of the dynamic scaling exponents of the interface height, allowing us to distinguish several regimes in the mentioned interface growth. Our asymptotic scaling exponents are again in good agreement with recent experiments. We conclude by discussing a global picture of the influence and consequences of SD in electrodeposition.

preprint1996arXiv

Electron dynamics in intentionally disordered semiconductor superlattices

We study the dynamical behavior of disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Dom\'ınguez-Adame {\em et al.} [Phys. Rev. B {\bf 51}, 14 ,359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controllingthe outp ut band using a dc electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work.

preprint1995arXiv

ELECTRONIC STATES IN GRADED-GAP JUNCTIONS WITH BAND INVERSION

We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the ${\bf k}\cdot{\bf p}$ approximation and assuming that the gap and the gap centre present linear profiles, we demonstrate the existence of a set of localized states along the growth direction with a discrete energy spectrum. The envelope functions are found to be combination of harmonic oscillator eigenfunctions, and the corresponding energy levels are proportional to the square root of the quantum number. The level spacing can be directly controlled by varying the structure thickness.