Researcher profile

Florian Pielnhofer

Florian Pielnhofer contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Synthesis of an aqueous, air-stable, superconducting 1T'-WS$_2$ monolayer-ink

Liquid-phase chemical exfoliation is ideal to achieve industry scale production of two-dimensional (2D) materials for a wide range of application such as printable electronics, catalysis and energy storage. However, many impactful 2D materials with potentials in quantum technologies can only be studied in lab settings due to their air-sensitivity, and loss of physical performance after chemical processing. Here, we report a simple chemical exfoliation method to create a stable, aqueous, surfactant-free, superconducting ink containing phase-pure 1T'-WS$_2$ monolayers that are isotructural to the air-sensitive topological insulator 1T'-WTe$_2$. We demonstrate that thin films can be cast on both hard and flexible substrates. The printed film is metallic at room temperature and superconducting below 7.3 K, shows strong anisotropic unconventional superconducting behavior with an in-plane and out-of-plane upper critical magnetic field of 30.1 T and 5.3 T, has a critical current of 44 mA, and is stable at ambient conditions for at least 30 days. Our results show that chemical processing can provide an engineering solution, which makes non-trivial 2D materials that used to be only studied in laboratories commercially accessible.

preprint2018arXiv

Possible Experimental Realization of a Basic Z2 Topological Semimetal

We report experimental and theoretical evidence that GaGeTe is a basic $Z_2$ topological semimetal with three types of charge carriers: bulk-originated electrons and holes as well as surface state electrons. This electronic situation is qualitatively similar to the primer 3D topological insulator Bi2Se3, but important differences account for an unprecedented transport scenario in GaGeTe. High-resolution angle-resolved photoemission spectroscopy combined with advanced band structure calculations show a small indirect energy gap caused by a peculiar band inversion in the \textit{T}-point of the Brillouin zone in GaGeTe. An energy overlap of the valence and conduction bands brings both electron- and hole-like carriers to the Fermi level, while the momentum gap between the corresponding dispersions remains finite. We argue that peculiarities of the electronic spectrum of GaGeTe have a fundamental importance for the physics of topological matter and may boost the material's application potential.