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Fengyuan Zhang

Fengyuan Zhang contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Multi-Task Learning Framework for Emotion Recognition in-the-wild

This paper presents our system for the Multi-Task Learning (MTL) Challenge in the 4th Affective Behavior Analysis in-the-wild (ABAW) competition. We explore the research problems of this challenge from three aspects: 1) For obtaining efficient and robust visual feature representations, we propose MAE-based unsupervised representation learning and IResNet/DenseNet-based supervised representation learning methods; 2) Considering the importance of temporal information in videos, we explore three types of sequential encoders to capture the temporal information, including the encoder based on transformer, the encoder based on LSTM, and the encoder based on GRU; 3) For modeling the correlation between these different tasks (i.e., valence, arousal, expression, and AU) for multi-task affective analysis, we first explore the dependency between these different tasks and propose three multi-task learning frameworks to model the correlations effectively. Our system achieves the performance of $1.7607$ on the validation dataset and $1.4361$ on the test dataset, ranking first in the MTL Challenge. The code is available at https://github.com/AIM3-RUC/ABAW4.

preprint2017arXiv

High density array of epitaxial BiFeO3 nanodots with robust and reversibly switchable topological domain states

The exotic topological domains in ferroelectrics and multiferroics have attracted extensive interest in recent years due to their novel functionalities and potential applications in nanoelectronic devices. One of the key challenges for such applications is a realization of robust yet reversibly switchable nanoscale topological domain states with high density, wherein spontaneous topological structures can be individually addressed and controlled. This has been accomplished in our work using high density arrays of epitaxial BiFeO3 (BFO) nanodots with lateral size as small as ~60 nm. We demonstrate various types of spontaneous topological domain structures, including center-convergent domains, center-divergent domains, and double-center domains, which are stable over sufficiently long time yet can be manipulated and reversibly switched by electric field. The formation mechanisms of these topological domain states, assisted by the accumulation of compensating charges on the surface, have also been revealed. These result demonstrated that these reversibly switchable topological domain arrays are promising for applications in high density nanoferroelectric devices such as nonvolatile memories