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Feng Sun

Feng Sun contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

MMINR: Multi-frame-to-Multi-frame Inference with Noise Resistance for Precipitation Nowcasting with Radar

Precipitation nowcasting based on radar echo maps is essential in meteorological research. Recently, Convolutional RNNs based methods dominate this field, but they cannot be solved by parallel computation resulting in longer inference time. FCN based methods adopt a multi-frame-to-single-frame inference (MSI) strategy to avoid this problem. They feedback into the model again to predict the next time step to get multi-frame nowcasting results in the prediction phase, which will lead to the accumulation of prediction errors. In addition, precipitation noise is a crucial factor contributing to high prediction errors because of its unpredictability. To address this problem, we propose a novel Multi-frame-to-Multi-frame Inference (MMI) model with Noise Resistance (NR) named MMINR. It avoids error accumulation and resists precipitation noiseÅ› negative effect in parallel computation. NR contains a Noise Dropout Module (NDM) and a Semantic Restore Module (SRM). NDM deliberately dropout noise simple yet efficient, and SRM supplements semantic information of features to alleviate the problem of semantic information mistakenly lost by NDM. Experimental results demonstrate that MMINR can attain competitive scores compared with other SOTAs. The ablation experiments show that the proposed NDM and SRM can solve the aforementioned problems.

preprint2020arXiv

Effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe

We use the modified Becke-Johnson exchange potential (mBJ) with the spin-orbit coupling effect (SOC) to study effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe. Our results show the fundamental band gap size can be tuned via biaxial strain. Compressive strain (tensile strain) can narrow (enlarge) band gap, and compressive strain causes the transition from quasi-direct to indirect band gap. Moreover, considering that any tuning of electronic structure is realized by changing the periodic potential distribution in the crystalline, we directly add constant potential (CP) to muffin-tin spheres. The results demonstrate that positive and negative CPs can narrow and enlarge band gap, respectively. At CP of 0.9 Ry, semiconductor-metal transition appears, and interestingly a new type of nearly linear dispersions occur at band edge. Our work is good for inspiring more experimental and further theoretical research works.