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F. Trojánek

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cond-mat.mes-hall astro-ph.EP astro-ph.IM physics.space-ph

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preprint2022arXiv

Sub-surface alteration and related change in reflectance spectra of space-weathered materials

One of the main complications for the interpretation of reflectance spectra of airless planetary bodies is surface alteration by space weathering caused by irradiation by solar wind and micrometeoroid particles. We aim to evaluate the damage to the samples from H and laser irradiation and relate it to the observed alteration in the spectra. We used olivine (OL) and pyroxene (OPX) pellets irradiated by 5 keV H ions and individual fs laser pulses and measured their visible (VIS) and near-infrared (NIR) spectra. We observed the pellets with scanning and transmission electron microscopy. We studied structural, mineralogical, and chemical modifications in the samples and connected them to changes in the reflectance spectra. In both minerals, H irradiation induces partially amorphous sub-surface layers containing small vesicles. In OL pellets, these vesicles are more tightly packed than in OPX ones. Related spectral change is mainly in the VIS spectral slope. Changes due to laser irradiation are mostly dependent on material's melting temperature. Only the laser-irradiated OL contains nanophase Fe particles, which induce detectable spectral slope change throughout the measured spectral range. Our results suggest that spectral changes at VIS-NIR wavelengths are mainly dependent on thickness of (partially) amorphous sub-surface layers. Amorphisation smooths microroughness, increasing the contribution of volume scattering and absorption over surface scattering. Soon after exposure to the space environment, the appearance of partially amorphous sub-surface layers results in rapid changes in the VIS spectral slope. In later stages (onset of micrometeoroid bombardment), we expect an emergence of nanoparticles to also mildly affect the NIR spectral slope. An increase in dimensions of amorphous layers and vesicles in the more space-weathered material will only cause band-depth variation and darkening.

preprint2016arXiv

Enhancement of the spin Hall voltage in a reverse-biased planar pn-junction

We report an experimental demonstration of a local amplification of the spin Hall voltage using an expanding depletion zone at a pn-junction in GaAs/AlGaAs Hall-bar microdevices. It is demonstrated that the depletion zone can be spatially expanded by applying reverse bias by at least 10~$μ$m at low temperature. In the depleted regime, the spin Hall signals reached more than one order of magnitude higher values than in the normal regime at the same electrical current flowing through the micro-device. It is shown that the pn-bias has two distinct effects on the detected spin Hall signal. It controls the local drift field at the Hall cross which is highly non-linear in the pn-bias due to the shift of the depletion front. Simultaneously, it produces a change in the spin-transport parameters due to the non-linear change in the carrier density at the Hall cross with the pn-bias.

preprint2015arXiv

Nanosecond spin-transfer over tens of microns in a bare GaAs/AlGaAs layer

The spin-conserving length-scale is a key parameter determining functionalities of a broad range of spintronic devices including magnetic multilayer spin-valves in the commercialized magnetic memories or lateral spin transistors in experimental spin-logic elements. Spatially resolved optical pump-and-probe experiments in the lateral devices allow for the direct measurement of the lengthscale and the time-scale at which spin-information is transferred from the injector to the detector. Using this technique, we demonstrate that in an undoped GaAs/AlGaAs layer spins are detected at distances reaching more than ten microns from the injection point at times as short as nanoseconds after the pump-pulse. The observed unique combination of the long-range and highrate electronic spin-transport requires simultaneous suppression of mechanisms limiting the spin life-time and mobility of carriers. Unlike earlier attempts focusing on elaborate doping, gating, or heterostructures we demonstrate that the bare GaAs/AlGaAs layer intrinsically provides superior spin-transport characteristics whether deposited directly on the substrate or embedded in complex heterostructures.