Researcher profile

F. Reinhard

F. Reinhard contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

Trust snapshot

Quick read

Trust 17 - Baseline

4works

0followers

3topics

4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

preprint2020arXiv

Can surface-transfer doping and UV irradiation during annealing improve shallow implanted Nitrogen-Vacancy centers in diamond?

It has been reported that conversion yield and coherence time of ion-implanted NV centers improve if the Fermi level is raised or lowered during the annealing step following implantation. Here we investigate whether surface transfer doping and surface charging, by UV light, can be harnessed to induce this effect. We analyze the coherence times and the yield of NV centers created by ion implantation and annealing, applying various conditions during annealing. Specifically, we study coating the diamond with nickel, palladium or aluminum oxide, to induce positive surface transfer doping, as well as annealing under UV illumination to trigger vacancy charging. The metal coated diamonds display a two times higher formation yield than the other samples. The coherence time $T_2$ varies by less than a factor of two between the investigated samples. Both effects are weaker than previous reports, suggesting that stronger modifications of the band structure are necessary to find a pronounced effect. UV irradiation has no effect on yield and $T_2$ times.

preprint2015arXiv

Probing molecular dynamics at the nanoscale via an individual paramagnetic center

Understanding the dynamics of molecules adsorbed to surfaces or confined to small volumes is a matter of increasing scientific and technological importance. Here, we demonstrate a pulse protocol using individual paramagnetic nitrogen vacancy (NV) centers in diamond to observe the time evolution of 1H spins from organic molecules located a few nanometers from the diamond surface. The protocol records temporal correlations among the interacting 1H spins, and thus is sensitive to the local system dynamics via its impact on the nuclear spin relaxation and interaction with the NV. We are able to gather information on the nanoscale rotational and translational diffusion dynamics by carefully analyzing the time dependence of the NMR signal. Applying this technique to various liquid and solid samples, we find evidence that liquid samples form a semi-solid layer of 1.5 nm thickness on the surface of diamond, where translational diffusion is suppressed while rotational diffusion remains present. Extensions of the present technique could be adapted to highlight the chemical composition of molecules tethered to the diamond surface or to investigate thermally or chemically activated dynamical processes such as molecular folding.

preprint2013arXiv

Single Defect Center Scanning Near-Field Optical Microscopy on Graphene

We demonstrate high resolution scanning fluorescence resonance energy transfer 10 microscopy between a single nitrogen-vacancy center as donor and graphene as acceptor. 11 Images with few nanometer resolution of single and multilayer graphene structures were 12 attained. An energy transfer efficiency of 30% at distances of 10nm between a single 13 defect and graphene was measured. Further the energy transfer distance dependence of 14 the nitrogen-vacancy center to graphene was measured to show the predicted d-4 15 dependence. Our studies pave the way towards a diamond defect center based versatile 16 single emitter scanning microscope.

preprint2010arXiv

Chemical control of the charge state of nitrogen-vacancy centers in diamond

We investigate the effect of surface termination on the charge state of nitrogen vacancy centers, which have been ion-implanted few nanometers below the surface of diamond. We find that, when changing the surface termination from oxygen to hydrogen, previously stable NV- centers convert into NV0 and, subsequently, into an unknown non-fluorescent state. This effect is found to depend strongly on the implantation dose. Simulations of the electronic band structure confirm the dissappearance of NV- in the vicinity of the hydrogen-terminated surface. The band bending, which induces a p-type surface conductive layer leads to a depletion of electrons in the nitrogen vacancies close to the surface. Therefore, hydrogen surface termination provides a chemical way for the control of the charge state of nitrogen-vacancy centers in diamond. Furthermore, it opens the way to an electrostatic control of the charge state with the use of an external gate electrode.