Researcher profile

F. Lefloch

F. Lefloch contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2026arXiv

Coherence Limits in Interference-Based cos(2$φ$) Qubits

We investigate the coherence properties of parity-protected $\cos(2φ)$ qubits based on interferences between two Josephson elements in a superconducting loop. We show that qubit implementations of a $\cos(2φ)$ potential using a single loop, such as those employing semiconducting junctions, rhombus circuits, flowermon and KITE structures, can be described by the same Hamiltonian as two multi-harmonic Josephson junctions in a SQUID geometry. We find that, despite the parity protection arising from the suppression of single Cooper pair tunneling, there exists a fundamental trade-off between charge and flux noise dephasing channels. Using numerical simulations, we examine how relaxation and dephasing rates depend on external flux and circuit parameters, and we identify the best compromise for maximum coherence. With currently existing circuit parameters, the qubit lifetime $T_1$ can exceed milliseconds while the dephasing time $T_φ$ remains limited to only a few microseconds due to either flux or charge noise. Our findings establish practical limits on the coherence of this class of qubits and raise questions about the long-term potential of this approach.

preprint2012arXiv

SQUIDs based set-up for probing current noise and correlations in three-terminal devices

We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three SQUIDs as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit. From these traces, we can measure the current mean value, the noise and cross-correlations between different branches of a device. In this paper we present calibration results of noise and cross-correlations obtained using low impedance macroscopic resistors. From these results we can extract the noise level of the set-up and show that there are no intrinsic correlations due to the measurement scheme. We also studied noise and correlations as a function of a DC current and estimated the electronic temperature of various macroscopic resistors.

preprint2010arXiv

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.