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Researcher profile

F. La Via

F. La Via contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phnucl-excond-mat.mes-hall

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Published work

6 published item(s)

preprint2020arXiv

3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buffer layer

Cubic silicon carbide (3C-SiC) is an emerging material for high power and new generation devices, but the development of high quality 3C-SiC layer still represents a scientific and technological challenge especially when grown on a Si substrate. In the present lecture, we discuss the use of a buffer layer between the epitaxial layer and the substrate in order to reduce the defectiveness and improve the overall quality of the SiC epi-film. In particular, we find that the morphology and the quality of the epi-film depends on the carbonization temperature and the concentration of Ge in close proximity of the Si1-xGex/SiC interface. Ge segregation at the interface influences the film quality, and in particular a [Ge]>12% in close proximity to the interface leads to the formation of poly-crystalls, while close to 10% induces a mirror like morphology. Moreover, by finely tuning the Ge concentration and carbonization temperature, crystal quality higher than that observed for SiC grown on bare silicon is achieved.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Impact of stacking faults and domain boundaries on the electronic transport in cubic silicon carbide probed by conductive atomic force microscopy

In spite of its great promises for energy efficient power conversion, the electronic quality of cubic silicon carbide (3C-SiC) on silicon is currently limited by the presence of a variety of extended defects in the heteroepitaxial material. However, the specific role of the different defects on the electronic transport is still under debate. In this work, a macro- and nano-scale characterization of Schottky contacts on 3C-SiC/Si was carried out, to elucidate the impact of the anti-phase-boundaries (APBs) and stacking-faults (SFs) on the forward and reverse current-voltage characteristics of these devices. Current mapping of 3C-SiC by conductive atomic force microscopy (CAFM) directly showed the role of APBs as the main defects responsible of the reverse bias leakage, while both APBs and SFs were shown to work as preferential current paths under forward polarization. Distinct differences between these two kinds of defects were also confirmed by electronic transport simulations of a front-to-back contacted SF and APB. These experimental and simulation results provide a picture of the role played by different types of extended defects on the electrical transport in vertical or quasi-vertical devices based on 3C-SiC/Si, and can serve as a guide for improving material quality by defects engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Measuring nuclear reaction cross sections to extract information on neutrinoless double beta decay

Neutrinoless double beta decay (0v\b{eta}\b{eta}) is considered the best potential resource to access the absolute neutrino mass scale. Moreover, if observed, it will signal that neutrinos are their own anti-particles (Majorana particles). Presently, this physics case is one of the most important research "beyond Standard Model" and might guide the way towards a Grand Unified Theory of fundamental interactions. Since the 0v\b{eta}\b{eta} decay process involves nuclei, its analysis necessarily implies nuclear structure issues. In the NURE project, supported by a Starting Grant of the European Research Council (ERC), nuclear reactions of double charge-exchange (DCE) are used as a tool to extract information on the 0v\b{eta}\b{eta} Nuclear Matrix Elements. In DCE reactions and \b{eta}\b{eta} decay indeed the initial and final nuclear states are the same and the transition operators have similar structure. Thus the measurement of the DCE absolute cross-sections can give crucial information on \b{eta}\b{eta} matrix elements. In a wider view, the NUMEN international collaboration plans a major upgrade of the INFN-LNS facilities in the next years in order to increase the experimental production of nuclei of at least two orders of magnitude, thus making feasible a systematic study of all the cases of interest as candidates for 0v\b{eta}\b{eta}.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

NURE: An ERC project to study nuclear reactions for neutrinoless double beta decay

Neutrinoless double beta decay (0ν\b{eta}\b{eta}) is considered the best potential resource to determine the absolute neutrino mass scale. Moreover, if observed, it will signal that the total lepton number is not conserved and neutrinos are their own anti-particles. Presently, this physics case is one of the most important research beyond Standard Model and might guide the way towards a Grand Unified Theory of fundamental interactions. Since the \b{eta}\b{eta} decay process involves nuclei, its analysis necessarily implies nuclear structure issues. The 0ν\b{eta}\b{eta} decay rate can be expressed as a product of independent factors: the phase-space factors, the nuclear matrix elements (NME) and a function of the masses of the neutrino species. Thus the knowledge of the NME can give information on the neutrino mass scale, if the 0ν\b{eta}\b{eta} decay rate is measured. In the NURE project, supported by a Starting Grant of the European Research Council, nuclear reactions of double charge-exchange (DCE) will be used as a tool to extract information on the \b{eta}\b{eta} NME. In DCE reactions and \b{eta}\b{eta} decay, the initial and final nuclear states are the same and the transition operators have similar structure. Thus the measurement of the DCE absolute crosssections can give crucial information on \b{eta}\b{eta} matrix elements.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

The dielectric breakdown (BD) of thermal oxide (SiO2) grown on cubic silicon carbide (3C-SiC) was investigated comparing the electrical behavior of macroscopic metal-oxidesemiconductor (MOS) capacitors with nanoscale current and capacitance mapping using conductive atomic force (C-AFM) and scanning capacitance microscopy (SCM). Spatially resolved statistics of the oxide BD events by C-AFM revealed that the extrinsic premature BD is correlated to the presence of peculiar extended defects, the anti-phase boundaries (APBs), in the 3C-SiC layer. SCM analyses showed a larger carrier density at the stacking faults (SFs) the 3C-SiC, that can be explained by a locally enhanced density of states in the conduction band. On the other hand, a local increase of minority carriers concentration was deduced for APBs, indicating that they behave as conducting defects having also the possibility to trap positive charges. The results were explained with the local electric field enhancement in correspondence of positively charged defects.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Simulation of the growth kinetics in group IV compound semiconductors

We present a stochastic simulation method designed to study at an atomic resolution the growth kinetics of compounds characterized by the sp3-type bonding symmetry. Formalization and implementation details are discussed for the particular case of the 3C-SiC material. A key feature of our numerical tool is the ability to simulate the evolution of both point-like and extended defects, whereas atom kinetics depend critically on process-related parameters. In particular, the simulations can describe the surface state of the crystal and the generation/evolution of defects as a function of the initial substrate condition and the calibration of the simulation parameters. We demonstrate that quantitative predictions of the microstructural evolution of the studied systems can be readily compared with the structural characterization of actual processed samples.

0 citations0 reviewsNo code linkedOpen access