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Researcher profile

F. Hartmann

F. Hartmann contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scihep-exhep-phphysics.app-ph

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Published work

4 published item(s)

preprint2022arXiv

Large inverted band-gap in strained three-layer InAs/GaInSb quantum wells

Quantum spin Hall insulators (QSHIs) based on HgTe and three-layer InAs/GaSb quantum wells (QWs) have comparable bulk band-gaps of about 10--18~meV. The former however features a band-gap vanishing with temperature, while the gap in InAs/GaSb QSHIs is rather temperature-independent.Here, we report on the realization of large inverted band-gap in strained three-layer InAs/GaInSb QWs. By temperature-dependent magnetotransport measurements of gated Hall bar devices, we extract a gap as high as 45 meV. Combining local and non-local measurements, we attribute the edge conductivity observed at temperatures up to 40 K to the topological edge channels with equilibration lengths of a few micrometers. Our findings pave the way toward manipulating edge transport at high temperatures in QW heterostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determination of carrier density and dynamics via magneto-electroluminescence spectroscopy in resonant tunneling diodes

We study the magneto-transport and magneto-electroluminescence properties of purely n-doped GaAs/Al$_{0.6}$Ga$_{0.4}$As resonant tunneling diodes with an In$_{0.15}$Ga$_{0.85}$As quantum well and emitter prewell. Before the resonant current condition, magneto-transport measurements reveal charge carrier densities comparable for diodes with and without the emitter prewell. The Landau level splitting is observed in the electroluminescence emission from the emitter prewell, enabling the determination of the charge carrier build-up. Our findings show that magneto-electroluminescence spectroscopy techniques provide useful insights on the charge carrier dynamics in resonant tunneling diodes and is a versatile tool to complement magneto-transport techniques. This approach will drive the way for developing potentially more efficient opto-electronic resonant tunneling devices, by e.g., monitoring voltage dependent charge accumulation for improving built-in fields and hence to maximize photodetector efficiency and/or minimize optical losses.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Comparison of Three-jet Events in Proton-Antiproton Collisions at Center-of-mass Energy 1.8 TeV to Predictions from a Next-to-leading Order QCD Calculation

The properties of three-jet events with total transverse energy greater than 320 GeV and individual jet energy greater than 20 GeV have been analyzed and compared to absolute predictions from a next-to-leading order (NLO) perturbative QCD calculation. These data, of integrated luminosity 86 pb^-1, were recorded by the CDF Experiment for proton-antiproton collisions at sqrt{s}=1.8 TeV. This study tests a model of higher order QCD processes that result in gluon emission and can be used to estimate the magnitude of the contribution of processes higher than NLO. The total cross section is measured to be 466 +/- 3(stat.)^{+207}_{-70}(syst.) pb. The differential cross section is furthermore measured for all kinematically accessible regions of the Dalitz plane, including those for which the theoretical prediction is unreliable. While the measured cross section is consistent with the theoretical prediction in magnitude, the two differ somewhat in shape in the Dalitz plane.

0 citations0 reviewsNo code linkedOpen access