Researcher profile

F. Guilloux

F. Guilloux contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2022arXiv

Response of a CMS HGCAL silicon-pad electromagnetic calorimeter prototype to 20-300 GeV positrons

The Compact Muon Solenoid Collaboration is designing a new high-granularity endcap calorimeter, HGCAL, to be installed later this decade. As part of this development work, a prototype system was built, with an electromagnetic section consisting of 14 double-sided structures, providing 28 sampling layers. Each sampling layer has an hexagonal module, where a multipad large-area silicon sensor is glued between an electronics circuit board and a metal baseplate. The sensor pads of approximately 1 cm$^2$ are wire-bonded to the circuit board and are readout by custom integrated circuits. The prototype was extensively tested with beams at CERN's Super Proton Synchrotron in 2018. Based on the data collected with beams of positrons, with energies ranging from 20 to 300 GeV, measurements of the energy resolution and linearity, the position and angular resolutions, and the shower shapes are presented and compared to a detailed Geant4 simulation.

preprint2020arXiv

Radiation hard DMAPS pixel sensors in 150nm CMOS technology for operation at LHC

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric field. As a consequence the signal is small and slow, and the radiation tolerance is below the requirements for LHC experiments by factors of 100 to 1000. We developed fully depleted (D)MAPS pixel sensors employing a 150 nm CMOS technology and using a high resistivity substrate as well as a high biasing voltage. The development has been carried out in three subsequent iterations, from prototypes to a large pixel matrix comprising a complete readout architecture suitable for LHC operation. Full CMOS electronics is embedded in large deep n-wells which at the same time serve as collection nodes (large electrode design). The devices have been intensively characterized before and after irradiation employing lab tests as well as particle beams. The devices can cope with particle rates seen by the innermost pixel detectors of the LHC pp-experiments or as seen by the outer pixel layers of the planned HL-LHC upgrade. They are radiation hard to particle fluences of at least $10^{15}~\mathrm{n_{eq}/cm^2}$ and total ionization doses of at least 50 Mrad.