Researcher profile

F. Garcia-Sanchez

F. Garcia-Sanchez contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

A comparison of two different mechanisms for deterministic spin orbit torque magnetization switching

In this article we analyze by modeling two possible mechanisms for magnetization switching using spin orbit torques, which have been reported to cause field-free deterministic switching in experiments. Here we compare the field-free magnetization switching due to a tilt of the anisotropy direction against the use of an antiferromagnetic bias field. Simple results obtained analytically show that a bias field not only causes the magnetization reversal but also reduces the corresponding energy barrier. The critical current required for magnetization switching is analyzed on the basis of a macrospin model. It is shown that although the field-free deterministic switching caused by a tilt of the anisotropy is more robust than the bias field in the development of memory elements, a compromise between requirements has to be adopted when selecting the parameters for specific applications.

preprint2016arXiv

A skyrmion-based spin-torque nano-oscillator

A model for a spin-torque nano-oscillator based on the self-sustained oscillation of a magnetic skyrmion is presented. The system involves a circular nanopillar geometry comprising an ultrathin film free magnetic layer with a strong Dzyaloshinkii-Moriya interaction and a polariser layer with a vortex-like spin configuration. It is shown that spin-transfer torques due to current flow perpendicular to the film plane leads to skyrmion gyration that arises from a competition between geometric confinement due to boundary edges and the vortex-like polarisation of the spin torques. A phenomenology for such oscillations is developed and quantitative analysis using micromagnetics simulations is presented. It is also shown that weak disorder due to random anisotropy variations does not influence the main characteristics of the steady-state gyration.

preprint2016arXiv

Time-resolved spin-torque switching in MgO-based perpendicularly magnetized tunnel junctions

We study ns scale spin-torque-induced switching in perpendicularly magnetized tunnel junctions (pMTJ). Although the switching voltages match with the macrospin instability threshold, the electrical signatures of the reversal indicate the presence of domain walls in junctions of various sizes. In the antiparallel (AP) to parallel (P) switching, a nucleation phase is followed by an irreversible flow of a wall through the sample at an average velocity of 40 m/s with back and forth oscillation movements indicating a Walker propagation regime. A model with a single-wall locally responding to the spin-torque reproduces the essential dynamical signatures of the reversal. The P to AP transition has a complex dynamics with dynamical back-hopping whose probability increases with voltage. We attribute this back-hopping to the instability of the nominally fixed layers.

preprint2009arXiv

Modeling of microwave-assisted switching in micron-sized magnetic ellipsoids

The microwave assisted magnetisation reversal is modelled in a permalloy micron-sized magnetic ellipsoid. Our simulations confirm that this process requires less field than magnetisation reversal under a static field. This is due to a different reversal mode which in case of the microwave-assisted process is always a ripple structure. During the magnetisation reversal two stages: nucleation and relaxation are distinguished. The nucleation process is governed by spinwave instabilities. The relaxation process is related to the domain expansion through domain wall propagation determined by the precessional motion of magnetic moments in the center of the domain walls. As a consequence, the switching time is a complex oscillating function of the microwave frequency.