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Researcher profile

F. Dominguez-Adame

F. Dominguez-Adame contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-matcond-mat.dis-nncond-mat.mes-hallcond-mat.mtrl-sci

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Published work

9 published item(s)

preprint2016arXiv

Interactions and thermoelectric effects in a parallel-coupled double quantum dot

We investigate the nonequilibrium transport properties of a double quantum dot system connected in parallel to two leads, including intradot electron-electron interaction. In the absence of interactions the system supports a bound state in the continuum. This state is revealed as a Fano antiresonance in the transmission when the energy levels of the dots are detuned. Using the Keldysh nonequilibrium Green's function formalism, we find that the occurrence of the Fano antiresonance survives in the presence of Coulomb repulsion. We give precise predictions for the experimental detection of bound states in the continuum. First, we calculate the differential conductance as a function of the applied voltage and the dot level detuning and find that crossing points in the diamond structure are revealed as minima due to the transmission antiresonances. Second, we determine the thermoelectric current in response to an applied temperature bias. In the linear regime, quantum interference gives rise to sharp peaks in the thermoelectric conductance. Remarkably, we find interaction induced strong current nonlinearities for large thermal gradients that may lead to several nontrivial zeros in the thermocurrent. The latter property is especially attractive for thermoelectric applications.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Numerical study of the localization length critical index in a network model of plateau-plateau transitions in the quantum Hall effect

We calculate numerically the localization length critical index within the Chalker-Coddington (CC) model for plateau-plateau transitions in the quantum Hall effect. Lyapunov exponents have been calculated with relative errors on the order $10^{-3}$. Such high precision was obtained by considering the distribution of Lyapunov exponents for large ensembles of relatively short chains and calculating the ensemble average values. We analyze thoroughly finite size effects and find the localization length critical index $ν= 2.517\pm 0.018$.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Phase coherence in tight-binding models with nonrandom long-range hopping

The density of states, even for a perfectly ordered tight-binding model, can exhibit a tail-like feature at the top of the band, provided the hopping integral falls off in space slowly enough. We apply the coherent potential approximation to study the eigenstates of a tight-binding Hamiltonian with uncorrelated diagonal disorder and long-range hopping, falling off as a power $μ$ of the intersite distance. For a certain interval of hopping range exponent $μ$, we show that the phase coherence length is infinite for the outermost state of the tail, irrespectively of the strength of disorder. Such anomalous feature can be explained by the smallness of the phase-space volume for the disorder scattering from this state. As an application of the theory, we mention that ballistic regime can be realized for Frenkel excitons in two-dimensional molecular aggregates, affecting to a large extent the optical response and energy transport.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

Low-temperature quenching of one-dimensional localised Frenkel excitons

We present a theoretical analysis of low-temperature quenching of one-dimensional Frenkel excitons that are localised by moderate on-site (diagonal) uncorrelated disorder. Exciton diffusion is considered as an incoherent hopping over localization segments and is probed by the exciton fluorescence quenching at point traps. The rate equation is used to calculate the temperature dependence of the exciton quenching. The activation temperature of the diffusion is found to be of the order of the width of the exciton absorption band. We demonstrate that the intra-segment scattering is extremely important for the exciton diffusion. We discuss also experimental data on the fast exciton-exciton annihilation in linear molecular aggregates at low temperatures.

0 citations0 reviewsNo code linkedOpen access
preprint2000arXiv

Electron states in a one-dimensional random binary alloy

We present a model for alloys of compound semiconductors by introducing a one-dimensional binary random system where impurities are placed in one sublattice while host atoms lie on the other sublattice. The source of disorder is the stochastic fluctuation of the impurity energy from site to site. Although the system is one-dimensional and random, we demonstrate analytical and numerically the existence of extended states in the neighborhood of a given resonant energy, which match that of the host atoms.

0 citations0 reviewsNo code linkedOpen access
preprint1995arXiv

Intentionally disordered superlattices with high dc conductance

We study disordered quantum-well-based semiconductor superlattices where the disorder is intentional and short-range correlated. Such systems consist of quantum-wells of two different thicknesses randomly distributed along the growth direction, with the additional constraint that wells of one kind always appears in pairs. Imperfections due to interface roughness are considered by allowing the quantum-well thicknesses to fluctuate around their {\em ideal} values. As particular examples, we consider wide-gap (GaAs-Ga$_{1-x}$Al$_{x}$As) and narrow-gap (InAs-GaSb) superlattices. We show the existence of a band of extended states in perfect correlated disordered superlattices, giving rise to a strong enhancement of their finite-temperature dc conductance as compared to usual random ones whenever the Fermi level matches this band. This feature is seen to survive even if interface roughness is taken into account. Our predictions can be used to demonstrate experimentally that structural correlations inhibit the localization effects of disorder, even in the presence of imperfections. This effect might be the basis of new, filter-like or other specific-purpose electronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint1994arXiv

Electronic Structure of Fibonacci Si Delta-Doped Gaas

We study the electronic structure of a new type of Fibonacci superlattice based on Si $δ$-doped GaAs. Assuming that $δ$-doped layers are equally spaced, quasiperiodicity is introduced by selecting two different donor concentrations and arranging them according to the Fibonacci series along the growth direction. The one-electron potential due to $δ$-doping is obtained by means of the Thomas-Fermi approach. The resulting energy spectrum is then found by solving the corresponding effective-mass wave equation. We find that a self-similar spectrum can be seen in the band structure. Electronic transport properties of samples are also discussed and related to the degree of spatial localization of electronic envelope-functions.

0 citations0 reviewsNo code linkedOpen access
preprint1994arXiv

Exact Solutions of Two-Band Models of Graded-Gap Superlattices

We have theoretically investigated two-band models of graded-gap superlattices within the envelope-function approximation. Assuming that the gap varies linearly with spatial coordinate, we are able to find exact solutions of the corresponding Dirac-like equation describing the conduction- and valence-band envelope-functions. The dispersion relation inside allowed miniband of the superlattice may be expressed in terms of confluent hypergeometric functions in a closed form.

0 citations0 reviewsNo code linkedOpen access