BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

F. Chiodi

F. Chiodi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-scicond-mat.softcond-mat.stat-mechnlin.AO

Catalog footprint

What is connected

6works
6topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2014arXiv

Laser doping for ohmic contacts in n-type Ge

We achieved ohmic contacts down to 5 K on standard n-doped Ge samples by creating a strongly doped thin Ge layer between the metallic contacts and the Ge substrate. Thanks to the laser doping technique used, Gas Immersion Laser Doping, we could attain extremely large doping levels above the solubility limit, and thus reduce the metal/doped Ge contact resistance. We tested independently the influence of the doping concentration and doped layer thickness, and showed that the ohmic contact improves when increasing the doping level and is not affected when changing the doped thickness. Furthermore, we characterised the doped Ge/Ge contact, showing that at high doping its contact resistance is the dominant contribution to the total contact resistance.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Geometry-related magnetic interference patterns in long SNS Josephson junctions

We have measured the critical current dependence on the magnetic flux of two long SNS junctions differing by the normal wire geometry. The samples are made by a Au wire connected to W contacts, via Focused Ion Beam assisted deposition. We could tune the magnetic pattern from the monotonic gaussian-like decay of a quasi 1D normal wire to the Fraunhofer-like pattern of a square normal wire. We explain the monotonic limit with a semiclassical 1D model, and we fit both field dependences with numerical simulations of the 2D Usadel equation. Furthermore, we observe both integer and fractional Shapiro steps. The magnetic flux dependence of the integer steps reproduces as expected that of the critical current Ic, while fractional steps decay slower with the flux than Ic.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Supra-oscillatory critical temperature dependence of Nb-Ho bilayers

We investigate the critical temperature Tc of a thin s-wave superconductor (Nb) proximity coupled to a helical rare earth ferromagnet (Ho). As a function of the Ho layer thickness, we observe multiple oscillations of Tc superimposed on a slow decay, that we attribute to the influence of the Ho on the Nb proximity effect. Because of Ho inhomogeneous magnetization, singlet and triplet pair correlations are present in the bilayers. We take both into consideration when solving the self consistent Bogoliubov-de Gennes equations, and we observe a reasonable agreement. We also observe non-trivial transitions into the superconducting state, the zero resistance state being attained after two successive transitions which appear to be associated with the magnetic structure of Ho.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Piercing an interface with a brush: collaborative stiffening

The hairs of a painting brush withdrawn from a wetting liquid self-assemble into clumps whose sizes rely on a balance between liquid surface tension and hairs bending rigidity. Here we study the situation of an immersed carpet in an evaporating liquid bath : the free extremities of the hairs are forced to pierce the liquid interface. The compressive capillary force on the tip of flexible hairs leads to buckling and collapse. However we find that the spontaneous association of hairs into stronger bundles may allow them to resist capillary buckling. We explore in detail the different structures obtained and compare them with similar patterns observed in micro-structured surfaces such as carbon nanotubes "forests".

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Contactless photoconductivity measurements on (Si) nanowires

Conducting nanowires possess remarkable physical properties unattainable in bulk materials. However our understanding of their transport properties is limited by the difficulty of connecting them electrically. In this Letter we investigate phototransport in both bulk silicon and silicon nanowires using a superconducting multimode resonator operating at frequencies between 0.3 and 3 GHz. We find that whereas the bulk Si response is mainly dissipative, the nanowires exhibit a large dielectric polarizability. This technique is contactless and can be applied to many other semiconducting nanowires and molecules. Our approach also allows to investigate the coupling of electron transport to surface acoustic waves in bulk Si and to electro-mechanical resonances in the nanowires.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Evidence for Two Time Scales in Long SNS Junctions

We use microwave excitation to elucidate the dynamics of long superconductor / normal metal / superconductor Josephson junctions. By varying the excitation frequency in the range 10 MHz - 40 GHz, we observe that the critical and retrapping currents, deduced from the dc voltage vs. dc current characteristics of the junction, are set by two different time scales. The critical current increases when the ac frequency is larger than the inverse diffusion time in the normal metal, whereas the retrapping current is strongly modified when the excitation frequency is above the electron-phonon rate in the normal metal. Therefore the critical and retrapping currents are associated with elastic and inelastic scattering, respectively.

0 citations0 reviewsNo code linkedOpen access