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Researcher profile

F. A. Zwanenburg

F. A. Zwanenburg contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallquant-ph

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Published work

9 published item(s)

preprint2020arXiv

Single-charge occupation in ambipolar quantum dots

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strong spin-orbit interaction and $g$-factor renormalization of hole spins in Ge/Si nanowire quantum dots

The spin-orbit interaction lies at the heart of quantum computation with spin qubits, research on topologically non-trivial states, and various applications in spintronics. Hole spins in Ge/Si core/shell nanowires experience a spin-orbit interaction that has been predicted to be both strong and electrically tunable, making them a particularly promising platform for research in these fields. We experimentally determine the strength of spin-orbit interaction of hole spins confined to a double quantum dot in a Ge/Si nanowire by measuring spin-mixing transitions inside a regime of spin-blockaded transport. We find a remarkably short spin-orbit length of $\sim$65 nm, comparable to the quantum dot length and the interdot distance. We additionally observe a large orbital effect of the applied magnetic field on the hole states, resulting in a large magnetic field dependence of the spin-mixing transition energies. Strikingly, together with these orbital effects, the strong spin-orbit interaction causes a significant enhancement of the $g$-factor with magnetic field.The large spin-orbit interaction strength demonstrated is consistent with the predicted direct Rashba spin-orbit interaction in this material system and is expected to enable ultrafast Rabi oscillations of spin qubits and efficient qubit-qubit interactions, as well as provide a platform suitable for studying Majorana zero modes.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon

In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using electron-beam lithography. Fabrication and subsequent electrical characterization of different devices yield reproducible results, such as typical MOSFET turn-on and pinch-off characteristics. Additionally, linear transport measurements at 4 K result in regularly spaced Coulomb oscillations, corresponding to single-hole tunneling through individual Coulomb islands. These Coulomb peaks are visible over a broad range in gate voltage, indicating very stable device operation. Energy spectroscopy measurements show closed Coulomb diamonds with single-hole charging energies of 5--10 meV, and lines of increased conductance as a result of resonant tunneling through additional available hole states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Dynamically controlled charge sensing of a few-electron silicon quantum dot

We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using digitallycontrolled feedback, the sensor exhibits sensitive and robust detection of the charge state of the quantum dot, even in the presence of charge drifts and random charge rearrangements. The sensor enables the occupancy of the quantum dot to be probed down to the single electron level.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot

Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum selection rules based on the Pauli exclusion principle, leading to the well-know Pauli spin blockade of electron transport for triplet states. Coherent spin states would be optimally preserved in an environment free of nuclear spins, which is achievable in silicon by isotopic purification. Here we report on a deliberately engineered, gate-defined silicon metal-oxide-semiconductor double quantum dot system. The electron occupancy of each dot and the inter-dot tunnel coupling are independently tunable by electrostatic gates. At weak inter-dot coupling we clearly observe Pauli spin blockade and measure a large intra-dot singlet-triplet splitting $>$ 1 meV. The leakage current in spin blockade has a peculiar magnetic field dependence, unrelated to electron-nuclear effects and consistent with the effect of spin-flip cotunneling processes. The results obtained here provide excellent prospects for realizing singlet-triplet qubits in silicon.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Spin filling of valley-orbit states in a silicon quantum dot

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Resonant tunnelling features in the transport spectroscopy of quantum dots

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Probe and Control of the Reservoir Density of States in Single-Electron Devices

We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Spin states of the first four holes in a silicon nanowire quantum dot

We report measurements on a silicon nanowire quantum dot with a clarity that allows for a complete understanding of the spin states of the first four holes. First, we show control of the hole number down to one. Detailed measurements at perpendicular magnetic fields reveal the Zeeman splitting of a single hole in silicon. We are able to determine the ground-state spin configuration for one to four holes occupying the quantum dot and find a spin filling with alternating spin-down and spin-up holes, which is confirmed by magnetospectroscopy up to 9T. Additionally, a so far inexplicable feature in single-charge quantum dots in many materials systems is analyzed in detail. We observe excitations of the zero-hole ground-state energy of the quantum dot, which cannot correspond to electronic or Zeeman states. We show that the most likely explanation is acoustic phonon emission to a cavity between the two contacts to the nanowire.

0 citations0 reviewsNo code linkedOpen access