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Ernesto E. Marinero

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2020arXiv

Hybrid Magneto Photonic Material Structure for Plasmon Assisted Magnetic Switching

We have proposed the use of surface plasmon resonances at the interface of hybrid magneto-photonic heterostructures [Opt. Mat. Exp., 7, 4316 (2017)] for all-optical control of the macroscopic spin orientation in nanostructures in fs time scales. This requires strong spin-photon coupling for the resonant enhancement of opto-magnetic fields, generated through the inverse Faraday effect, in magnetic nanostructures with perpendicular anisotropy. Here we report on the development of nm thick interlayers to control the growth orientation of hcp-Co alloys grown on refractory plasmonic materials to align the magnetic axis out-of-plane, thereby meeting key requirements for the realization of ultrafast magneto-photonic devices.

preprint2016arXiv

Ultrafast Spin-Transfer-Torque Switching of Synthetic Ferrimagnets

The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required to meet thermal stability requirements that demand higher switching current densities. Here, we propose a simple solution to these issues based on synthetic ferrimagnet (SFM) structures. It is commonly assumed that to achieve a given switching delay, the current has to exceed the critical current by a certain factor and so a higher critical current implies a higher switching current. We show that this is not the case for SFM structures which can provide significantly reduced switching delay for a given current density, even though the critical current is increased. This non-intuitive result can be understood from the requirements of angular momentum conservation. We conclude that a 20 nm diameter MTJ incorporating the proposed SFM free layer structure can be switched in tens of picosecond time scales. This remarkable switching speed can be attained by employing current perpendicular magnetic anisotropy materials with experimentally demonstrated exchange coupling strengths.

preprint2011arXiv

Tuning Fano-type resonances in coupled quantum point contacts by applying asymmetric voltages

We study the ballistic magnetotransport in a double quantum point contact (QPC) device consisting of a quasi-one-dimensional quantum wire with an embedded island-like impurity - etched nano-hole as in a recently published experiment [J. C. Chen, Y. Lin, K.-T. Lin, T. Ueda and S. Komiyama, Appl. Phys. Lett. 94, 012105 (2009)]. We reproduce the zero field quantized conductance, the interference phenomenon induced by the coupled QPCs, as well as the Ramsauer-like resonances observed in the experiments. At finite magnetic fields Fano-type resonances arises in the conductance due to the formation of localized states at the impurity periphery and to an inter-edge state resonant coupling effect. It is predicted that the Fano-type resonances can be controlled by an asymmetric confinement of the QPCs.

preprint2009arXiv

Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects

InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on magnetotransport measurements of AlSb/InAs/AlSb Hall bars at a shallow depth of 20 nm. Analysis of the observed Shubnikov-de Haas oscillations and modeling show that spin splitting energies in excess of 2.3 meV occur at zero magnetic field. We conclude that the spin-splitting results from the Rashba effect due to the band bending in the quantum well. This is caused by substantial electron transfer from the surface to the quantum well and becomes significant when the quantum well is located near the surface.