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Researcher profile

Engin Durgun

Engin Durgun contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.app-ph

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Published work

4 published item(s)

preprint2022arXiv

Bulk and surface electronic structure of Bi$_4$Te$_3$ from $GW$ calculations and photoemission experiments

We present a combined theoretical and experimental study of the electronic structure of stoichiometric Bi$_4$Te$_3$, a natural superlattice of alternating Bi$_2$Te$_3$ quintuple layers and Bi bilayers. In contrast to the related semiconducting compounds Bi$_2$Te$_3$ and Bi$_1$Te$_1$, density functional theory predicts Bi$_4$Te$_3$ to be a semimetal. In this work, we compute the quasiparticle electronic structure of Bi$_4$Te$_3$ in the framework of the $GW$ approximation within many-body perturbation theory. The quasiparticle corrections are found to modify the dispersion of the valence and conduction bands in the vicinity of the Fermi energy, leading to the opening of a small indirect band gap. Based on the analysis of the eigenstates, Bi$_4$Te$_3$ is classified as a dual topological insulator with bulk topological invariants $\mathbb{Z}_2$ (1;111) and magnetic mirror Chern number $n_M=1$. The bulk $GW$ results are used to build a Wannier-functions based tight-binding Hamiltonian that is further applied to study the electronic properties of the (111) surface. The comparison with our angle-resolved photoemission measurements shows excellent agreement between the computed and measured surface states and indicates the dual topological nature of Bi$_4$Te$_3$.

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preprint2021arXiv

High elasticity and strength of ultra-thin metallic transition metal dichalcogenides

Mechanical properties of transition metal dichalcogenides (TMDCs) are relevant to their prospective applications in flexible electronics. So far, the focus has been on the semiconducting TMDCs, mostly MoX2 and WX2 (X=S, Se) due to their potential in optoelectronics. A comprehensive understanding of the elastic properties of metallic TMDCs is needed to complement the semiconducting TMDCs in flexible optoelectronics. Thus, mechanical testing of metallic TMDCs is pertinent to the realization of the applications. Here, we report on the atomic force microscopy-based nano-indentation measurements on ultra-thin 2H-TaS2 crystals to elucidate the stretching and breaking of the metallic TMDCs. We explored the elastic properties of 2H-TaS2 at different thicknesses ranging from 3.5 nm to 12.6 nm and find that the Young's modulus is independent of the thickness at a value of 85.9 +- 10.6 GPa, which is lower than the semiconducting TMDCs reported so far. We determined the breaking strength as 5.07 4- 0.10 GPa which is 6% of the Young's modulus. This value is comparable to that of other TMDCs. We used ab initio calculations to provide an insight to the high elasticity measured in 2H-TaS2. We also performed measurements on a small number of 1T-TaTe2, 3R-NbS2 and 1T-NbTe2 samples and extended our ab initio calculations to these materials to gain a deeper understanding on the elastic and breaking properties of metallic TMDCs. This work illustrates that the studied metallic TMDCs are suitable candidates to be used as additives in composites as functional and structural elements and for flexible conductive electronic devices.

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preprint2020arXiv

Thermal Conductivity Measurements in Nanosheets via Bolometric Effect

Thermal conductivity measurement techniques for materials with nanoscale dimensions require fabrication of very complicated devices or their applicability is limited to a class of materials. Discovery of new methods with high thermal sensitivity are required for the widespread use of thermal conductivity measurements in characterizing materials properties. We propose and demonstrate a simple non-destructive method with superior thermal sensitivity to measure the in-plane thermal conductivity of nanosheets and nanowires using the bolometric effect. The method utilizes laser beam heating to create a temperature gradient, as small as a fraction of a Kelvin, over the suspended section of the nanomaterial with electrical contacts. Local temperature rise due to the laser irradiation alters the electrical resistance of the device, which can be measured precisely. This resistance change is then used to extract the temperature profile along the nanomaterial using thermal conductivity as a fitting parameter. We measured the thermal conductivity of V2O3 nanosheets to validate the applicability of the method and found an excellent agreement with the literature. Further, we measured the thermal conductivity of metallic 2H-TaS2 for the first time and performed ab initio calculations to support our measurements. Finally, we discussed the applicability of the method on semiconducting nanosheets and performed measurements on WS2 and MoS2 thin flakes.

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preprint2010arXiv

Confined states in multiple quantum well structures of Si$_{n}$Ge$_{n}$ nanowire superlattices

Mechanical properties, atomic and energy band structures of bare and hydrogen passivated Si$_{n}$Ge$_{n}$ nanowire superlattices have been investigated by using first-principles pseudopotential plane wave method. Undoped, tetrahedral Si and Ge nanowire segments join pseudomorphically and can form superlattice with atomically sharp interface. We found that Si$_{n}$ nanowires are stiffer than Ge$_{n}$ nanowires. Hydrogen passivation makes these nanowires and Si$_{n}$Ge$_{n}$ nanowire superlattice even more stiff. Upon heterostructure formation, superlattice electronic states form subbands in momentum space. Band lineups of Si and Ge zones result in multiple quantum wells, where specific states at the band edges and in band continua are confined. The electronic structure of the nanowire superlattice depends on the length and cross section geometry of constituent Si and Ge segments. Since bare Si and Ge nanowires are metallic and the band gaps of hydrogenated ones varies with the diameter, Si$_{n}$Ge$_{n}$ superlattices offer numerous alternatives for multiple quantum well devices with their leads made from the constituent metallic nanowires.

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