Researcher profile

Emi Minamitani

Emi Minamitani contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Topological descriptor of thermal conductivity in amorphous materials

Quantifying the correlation between the complex structures of amorphous materials and their physical properties has been a long-standing problem in materials science. In amorphous Si, a representative covalent amorphous solid, the presence of a medium-range order (MRO) has been intensively discussed. However, the specific atomic arrangement corresponding to the MRO and its relationship with physical properties, such as thermal conductivity, remain elusive. Here, we solve this problem by combining topological data analysis, machine learning, and molecular dynamics simulations. By using persistent homology, we constructed a topological descriptor that can predict the thermal conductivity. Moreover, from the inverse analysis of the descriptor, we determined the typical ring features that correlated with both the thermal conductivity and MRO. The results provide an avenue for controlling the material characteristics through the topology of nanostructures.

preprint2022arXiv

Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Investigation of charged defects is necessary to understand the properties of semiconductors. While density functional theory calculations can accurately describe the relevant physical quantities, these calculations increase the computational loads substantially, which often limits the application of this method to large-scale systems. In this study, we propose a new scheme of neural network potential (NNP) to analyze the point defect behavior in multiple charge states. The proposed scheme necessitates only minimal modifications to the conventional scheme. We demonstrated the prediction performance of the proposed NNP using wurzite-GaN with a nitrogen vacancy with charge states of 0, 1+, 2+, and 3+. The proposed scheme accurately trained the total energies and atomic forces for all the charge states. Furthermore, it fairly reproduced the phonon band structures and thermodynamics properties of the defective structures. Based on the results of this study, we expect that the proposed scheme can enable us to study more complicated defective systems and lead to breakthroughs in novel semiconductor applications.

preprint2020arXiv

Theoretical prediction of superconductivity in monolayer h-BN doped with alkaline-earth metals (Ca, Sr, Ba)

We investigated the possibility of superconductivity in monolayer hexagonal boron nitride (h-BN) doped using each group-1 (Li, Na, K) and group-2 (Be, Mg, Ca, Sr, Ba) atom via ab-initio calculations. Consequently, we reveal that Sr- and Ba-doped monolayer h-BN and Ca-doped monolayer h-BN with 3.5% tensile strain are energetically stable and become superconductors with Tc values of 5.83 K, 1.53 K, and 12.8 K, respectively, which are considerably higher than those of Ca-, Sr-, and Ba-doped graphene. In addition, the momentum-resolved electron-phonon coupling (EPC) constant shows that the scattering among intrinsic π electrons around the Γ point dominates Tc. The scattering process is mediated by the low-energy vibration of the adsorbate. Moreover, compared with graphene, the stronger adsorbate-substrate interaction and lower symmetry in h-BN are critical for enhancing EPC in doped h-BN.