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Researcher profile

Elena Cianci

Elena Cianci contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

5 published item(s)

preprint2020arXiv

Effect of the Density of Reactive Sites in P(S-r-MMA) Film During Al2O3 Growth by Sequential Infiltration Synthesis

Sequential infiltration synthesis (SIS) consists in a controlled sequence of metal organic precursors and co-reactant vapor exposure cycles of polymer films. Two aspects characterize a SIS process: precursor molecule diffusion within the polymer matrix and precursor molecule entrapment into polymer films via chemical reaction. In this paper, we investigated SIS process for the alumina synthesis using trimethylaluminum (TMA) and H2O in thin films of poly(styrene-random-methyl methacrylate) (P(S-r-MMA)) with variable MMA content. The amount of alumina grown in the P(S-r-MMA) films linearly depends on MMA content. A relatively low concentration of MMA in the copolymer matrix is enough to guarantee the volumetric growth of alumina in the polymer film. In pure polystyrene, metal oxide seeds grow in the sub-surface region of the film. In-situ dynamic spectroscopic ellipsometry (SE) analyses provide quantitative information about TMA diffusivity in pristine P(S-r-MMA) matrices as a function of MMA fraction, allowing further insight into the process kinetics as a function of the density of reactive sites in the polymer film. This work improves the understanding of infiltration synthesis mechanism and provides a practical approach to potentially expand the library of polymers that can be effectively infiltrated by introducing reactive sites in the polymer chain.

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preprint2020arXiv

Ozone-based sequential infiltration synthesis of Al2O3 nanostructures in symmetric block copolymer

Sequential infiltration synthesis (SIS) provides an original strategy to grow inorganic materials by infiltrating gaseous precursors in polymeric films. Combined with micro-phase separated nanostructures resulting from block copoly-mer (BCP) self-assembly, SIS selectively binds the precursors to only one domain mimicking the morphology of the original BCP template. This methodology represents a smart solution for the fabrication of inorganic nanostructures starting from self-assembled BCP thin films, in view of advanced lithographic application and of functional nanostructure synthesis. The SIS process using Trimethylaluminum (TMA) and H2O precursors in self-assembled PS-b-PMMA BCP thin films established as a model system, where the PMMA phase is selectively infiltrated. However the temperature range allowed by polymeric material restricts the available precursors to highly reactive reagents, such as TMA. In order to extend the SIS methodology and access a wide library of materials, a crucial step is the implementation of processes using reactive reagents that are fully compatible with the initial polymeric template. This work reports a comprehensive morphological (SEM, SE, AFM) and physico-chemical (XPS) investigation of alumina nanostructures synthesized by means of a SIS process using O3 as oxygen precursor in self-assembled PS-b-PMMA thin films with lamellar morphology. The comparison with the H2O-based SIS pro-cess validates the possibility to use O3 as oxygen precursor expanding the possible range of precursors for the fabrication of inorganic nanostructures.

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preprint2020arXiv

Trimethylaluminum Diffusion in PMMA Thin Films during Sequential Infiltration Synthesis: In Situ Dynamic Spectroscopic Ellipsometric Investigation

Sequential infiltration synthesis (SIS) provides a successful route to grow inorganic materials into polymeric films by penetrating of gaseous precursors into the polymer, both in order to enhance the functional properties of the polymer creating an organic-inorganic hybrid material, and to fabricate inorganic nanostructures when infiltrating in patterned polymer films or in selfassembled block copolymers. A SIS process consists in a controlled sequence of metal organic precursor and co-reactant vapor exposure cycles of the polymer films in an atomic layer deposition (ALD) reactor. In this work, we present a study of the SIS process of alumina using trimethylaluminum (TMA) and H2O in various polymer films using in situ dynamic spectroscopic ellipsometry (SE). In situ dynamic SE enables time-resolved monitoring of the swelling of the polymer, which is relevant to the diffusion and retain of the metal precursor into the polymer itself. Different swelling behaviour of poly(methylmethacrylate) (PMMA) and polystyrene (PS) was observed when exposed to TMA vapor. PMMA films swell more significantly than PS films do, resulting in very different infiltrated Al2O3 thickness after polymer removal in O2 plasma. PMMA films reach different swollen states upon TMA exposure and reaction with H2O, depending on the TMA dose and on the purge duration after TMA exposure, which correspond to different amounts of metal precursor retained inside the polymer and converted to alumina. Diffusion coefficients of TMA in PMMA were extracted investigating the swelling of pristine PMMA films during TMA infiltration and shown to be dependent on polymer molecular weight. In situ dynamic SE monitoring allows to control the SIS process tuning it from an ALD-like process for long purge to a chemical vapour deposition - like process selectively confined inside the polymer films

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preprint2013arXiv

Exploiting magnetic properties of Fe doping in zirconia

In this study we explore, both from theoretical and experimental side, the effect of Fe doping in ZrO2 (ZrO2:Fe). By means of first principles simulation we study the magnetization density and the magnetic interaction between Fe atoms. We also consider how this is affected by the presence of oxygen vacancies and compare our findings with models based on impurity band and carrier mediated magnetic interaction. Experimentally thin films (~ 20 nm) of ZrO2:Fe at high doping concentration are grown by atomic layer deposition. We provide experimental evidence that Fe is uniformly distributed in the ZrO2 by transmission electron microscopy and energy dispersive X-ray mapping, while X-ray diffraction evidences the presence of the fluorite crystal structure. Alternating gradient force magnetometer measurements show magnetic signal at room temperature, however with low magnetic moment per atom. Results from experimental measures and theoretical simulations are compared.

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preprint2013arXiv

The role of oxygen vacancies on the structure and the density of states of iron doped zirconia

In this paper we study, both with theoretical and experimental approach, the effect of iron doping in zirconia. Combining density functional theory (DFT) simulations with the experimental characterization of thin films, we show that iron is in the Fe3+ oxidation state and accordingly that the films are rich in oxygen vacancies (VO). VO favor the formation of the tetragonal phase in doped zirconia (ZrO2:Fe) and affect the density of state at the Fermi level as well as the local magnetization of Fe atoms. We also show that the Fe(2p) and Fe(3p) energy levels can be used as a marker for the presence of vacancies in the doped system. In particular the computed position of the Fe(3p) peak is strongly sensitive to the VO to Fe atoms ratio. A comparison of the theoretical and experimental Fe(3p) peak position suggests that in our films this ratio is close to 0.5. Besides the interest in the material by itself, ZrO2:Fe constitutes a test case for the application of DFT on transition metals embedded in oxides. In ZrO2:Fe the inclusion of the Hubbard U correction significantly changes the electronic properties of the system. However the inclusion of this correction, at least for the value U = 3.3 eV chosen in the present work, worsen the agreement with the measured photo-emission valence band spectra.

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