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Egbert Zojer

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cond-mat.mtrl-sci

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preprint2022arXiv

Understanding the origin of the particularly small and anisotropic thermal expansion of MOF-74

Metal-organic frameworks often display large positive or negative thermal expansion coefficients. MOF-74, a material envisioned for many applications does not display such a behavior. For this system, temperature-dependent x-ray diffraction reveals particularly small negative thermal expansion coefficients perpendicular and positive ones parallel to the hexagonally arranged pores. The observed trends are explained by combining state-of-the-art density-functional theory calculations with the Grüneisen theory of thermal expansion, which allows tracing back thermal expansion to contributions of individual phonons. On the macroscopic level, the small thermal expansion coefficients arise from two aspects: compensation effects caused by the large coupling between stress and strain perpendicular to the pores and the small magnitudes of the mean Grüneisen tensor elements, $\langleγ\rangle$, which provide information on how strains in the material influence its phonon frequencies. To understand the small mean Grüneisen tensor in MOF-74, the individual mode contributions are analyzed based on the corresponding atomic motions. This reveals that only the lowest frequency modes up to ~3 THz provide non-negligible contributions, such that $\langleγ\rangle$ drops sharply at higher temperatures. These considerations reveal how the details of the anharmonic properties of specific phonon bands determine the magnitude and sign of thermal expansion in a prototypical material like MOF-74.

preprint2021arXiv

Nature of the interactions determining the stacking motif of covalent organic frameworks

Covalent organic frameworks (COFs) have attracted significant attention due to their chemical versatility combined with a significant number of potential applications. Of particular interest are two-dimensional COFs, where the organic building units are linked by covalent bonds within a plane. Most properties of these COFs are determined by the relative arrangement of neighboring layers. These are typically found to be laterally displaced, which, for example, reduces the electronic coupling between the layers. In the present contribution, we use dispersion-corrected density-functional theory to elucidate the origin of that displacement, showing that the common notion that the displacement is a consequence of electrostatic repulsions of polar building blocks can be misleading. For the representative case of COF-1, we find that electrostatic and van der Waals interactions would, actually, favor a cofacial arrangement of the layers and that Pauli repulsion is the crucial factor causing the serrated AA stacking. A more in-depth analysis of the electrostatic contribution reveals that the "classical" Coulomb repulsion between the boroxine building blocks of COF-1 suggested by chemical intuition does exist, but is overcompensated by attractive effects due to charge-penetration in the phenylene units. The situation becomes more involved when additionally allowing the interlayer distance to relax for each displacement, as then the different distance-dependences of the various types of interactions come into play. The overall behavior calculated for COF-1 is recovered for several additional COFs with differently sized pi-systems and topologies, implying that the presented results are of more general relevance.

preprint2020arXiv

Evaluating Computational Shortcuts in Supercell-Based Phonon Calculations of Molecular Crystals: The Instructive Case of Naphthalene

Phonons crucially impact a variety of properties of organic semiconductor materials. For instance, charge- and heat transport depend on low-frequency phonons, while for other properties, such as the free energy, especially high-frequency phonons count. For all these quantities one needs to know the entire phonon band structure, whose simulation becomes exceedingly expensive for more complex systems when using methods like dispersion-corrected density functional theory (DFT). Therefore, in the present contribution we evaluate the performance of more approximate methodologies, including density functional tight binding (DFTB) and a pool of force fields (FF) of varying complexity and sophistication. Beyond merely comparing phonon band structures, we also critically evaluate to what extent derived quantities, like temperature-dependent heat capacities, mean squared thermal displacements and temperature-dependent free energies are impacted by shortcomings in the description of the phonon bands. As a benchmark system, we choose (deuterated) naphthalene, as the only organic semiconductor material for which to date experimental phonon band structures are available in the literature. Overall, the best performance amongst the approximate methodologies is observed for a system-specifically parametrized second-generation force field. Interestingly, in the low-frequency regime also force fields with a rather simplistic model for the bonding interactions (like the General Amber Force Field) perform rather well. As far as the tested DFTB parametrization is concerned, we obtain a significant underestimation of the unit cell volume resulting in a pronounced overestimation of the phonon energies in the low frequency region. This cannot be mended by relying on the DFT-calculated unit cell, since with this unit cell the DFTB phonon frequencies significantly underestimate the experiments.