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Edwin Kim

Edwin Kim appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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2 published item(s)

preprint2012arXiv

Electron Spin Resonance Shift and Linewidth Broadening of Nitrogen-Vacancy Centers in Diamond as a Function of Electron Irradiation Dose

A high-nitrogen-concentration diamond sample was subject to 200-keV electron irradiation using a transmission electron microscope. The optical and spin-resonance properties of the nitrogen-vacancy (NV) color centers were investigated as a function of the irradiation dose up to 6.4\times1021 e-/cm2. The microwave transition frequency of the NV- center was found to shift by up to 0.6% (17.1 MHz) and the linewidth broadened with increasing electron-irradiation dose. Unexpectedly, the measured magnetic sensitivity is best at the lowest irradiation dose, even though the NV concentration increases monotonically with increasing dose. This is in large part due to a sharp reduction in optically-detected spin contrast at higher doses.

preprint2011arXiv

Chemical Vapor Deposition-Assembled Graphene Field-Effect Transistor on Hexagonal Boron Nitride

We investigate key electrical properties of monolayer graphene assembled by chemical-vapor-deposition (CVD) as impacted by supporting substrate material. Graphene field-effect transistors (GFETs) were fabricated with carbon channel placing directly on hexagonal boron nitride (h-BN) and SiO2, respectively. Small-signal transconductance (gm) and effective carrier mobility (μeff) are improved by 8.5 and 4 times on h-BN, respectively, as compared with that on SiO2. Compared with GFET with exfoliated graphene on SiO2, gm and μeff measured from device with CVD graphene on h-BN substrate exhibits comparable values. The experiment demonstrates the potential of employing h-BN as a platform material for large-area carbon electronics.