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E. N. Bratus'

E. N. Bratus' appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.supr-concond-mat.mes-hall

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Published work

10 published item(s)

preprint2016arXiv

Nonequilibrium and relaxation effects in tunnel superconducting junctions

The specific property of a planar tunnel junction with thin-film diffusive plates and long enough leads is an essential enhancement of its transmission coefficient compared to the bare transparency of the tunnel barrier [1,2]. In voltage-biased junctions, this creates favourable conditions for strong nonequilibrium of quasiparticles in the junction plates and leads, produced by multiparticle tunneling. We study theoretically the interplay between the nonequilibrium and relaxation processes in such junctions and found that nonequilibrium in the leads noticeably modifies the current-voltage characteristic at $eV > 2Δ$, especially the excess current, whereas strong diffusive relaxation restores the result of the classical tunnel model. At $eV \leq 2Δ$, the diffusive relaxation decreases the peaks of the multiparticle currents. The inelastic relaxation in the junction plates essentially suppresses the $n$-particle currents ($n>2$) by the factor $n$ for odd and $n/2$ for even $n$. The results may be important for the problem of decoherence in Josephson-junction based superconducting qubits.

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preprint2014arXiv

Current noise in diffusive SNS junctions in the incoherent MAR regime (a review)

We present a theory for the current shot noise in long diffusive SNS structures with low-resistive interfaces at arbitrary temperatures. In such structures, the noise is mostly generated by normal electron scattering in the N-region. Whereas the $I$-$V$ characteristics are approximately described by Ohm's law, the current noise reveals all characteristic features of the MAR regime: "giant" enhancement at low voltages, pronounced SGS, and excess noise at large voltages. The most spectacular feature of the noise in the incoherent MAR regime is a universal finite noise level at zero voltage and at zero temperature, $S= 4Δ/3R$. This effect can be understood as the result of the enhancement of the effective charge of the carriers, $q^{\it eff}=2Δ/V$, or, alternatively, as the effect of strongly non-equilibrium quasiparticle population in the energy gap region with the effective temperature $T_0=Δ/3$. Under the condition of dominant electron-electron scattering, the junction undergoes crossover to the hot electron regime, with the effective temperature of the subgap electrons decreasing logarithmically with the voltage. Calculation of the noise power has been done on the basis of circuit theory of the incoherent MAR.

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preprint2014arXiv

Current-voltage characteristics of asymmetric double-barrier Josephson junctions

We develop a theory for the current-voltage characteristics of diffusive superconductor-normal metal-superconductor Josephson junctions with resistive interfaces and the distance between the electrodes smaller than the superconducting coherence length. The theory allows for a quantitative analytical and numerical analysis in the whole range of the interface transparencies and asymmetry. We focus on the regime of large interface resistance compared to the resistance of the normal region, when the electron-hole dephasing in the normal region is significant and the finite length of the junction plays a role. In the limit of strong asymmetry we find pronounced current structures at the combination subharmonics of $Δ+Δ_g$, where $Δ_g$ is the proximity minigap in the normal region, in addition to the subharmonics of the energy gap $2Δ$ in the electrodes. In the limit of rather transparent interfaces, our theory recovers a known formula for the current in a short mesoscopic connector - a convolution of the current through a single-channel point contact with the transparency distribution for an asymmetric double-barrier potential.

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preprint2011arXiv

Dissipative charge transport in diffusive superconducting double-barrier junctions

We solve the coherent multiple Andreev reflection (MAR) problem and calculate current-voltage characteristics (IVCs) for Josephson SINIS junctions, where S are local-equilibrium superconducting reservoirs, I denotes tunnel barriers, and N is a short diffusive normal wire, the length of which is much smaller than the coherence length, and the resistance is much smaller than the resistance of the tunnel barriers. The charge transport regime in such junctions qualitatively depends on a characteristic value γ= Δτ_d of relative phase shifts between the electrons and retro-reflected holes accumulated during the dwell time τ_d. In the limit of small electron-hole dephasing γ<< 1, our solution recovers a known formula for a short mesoscopic connector extended to the MAR regime. At large dephasing, the subharmonic gap structure in the IVC scales with 1/ γ, which thus plays the role of an effective tunneling parameter. In this limit, the even gap subharmonics are resonantly enhanced, and the IVC exhibits portions with negative differential resistance.

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preprint2007arXiv

Multiparticle tunneling in diffusive superconducting junctions

We formulate a theoretical framework to describe multiparticle current transport in planar superconducting tunnel junctions with diffusive electrodes. The approach is based on direct solving of quasiclassical Keldysh-Green function equations for nonequilibrium superconductors, and consists of a combination of a circuit theory analysis and improved perturbation expansion. The theory predicts much greater scaling parameter for the subharmonic gap structure of the tunnel current in diffusive junctions compared to the one in ballistic junctions and mesoscopic constrictions with the same barrier transparency.

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preprint2006arXiv

Subgap current in superconducting tunnel junctions with diffusive electrodes

We calculate the subgap current in planar superconducting tunnel junctions with thin-film diffusive leads. It is found that the subharmonic gap structure of the tunnel current scales with an effective tunneling transparency which may exceed the junction transparency by up to two orders of magnitude depending on the junction geometry and the ratio between the coherence length and the elastic scattering length. These results provide an alternative explanation of anomalously high values of the subgap current in tunnelling experiments often ascribed to imperfection of the insulating layer. We also discuss the effect of finite lifetime of quasiparticles as the possible origin of additional enhancement of multiparticle tunnel currents.

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preprint2001arXiv

Current noise in long diffusive SNS junctions in the incoherent MAR regime

Spectral density of current fluctuations at zero frequency is calculated for a long diffusive SNS junction with low-resistive interfaces. At low temperature, T << Delta, the subgap shot noise approaches linear voltage dependence, S=(2/ 3R)(eV + 2Delta), which is the sum of the shot noise of the normal conductor and voltage independent excess noise. This result can also be interpreted as the 1/3-suppressed Poisson noise for the effective charge q = e(1+2Delta/eV) transferred by incoherent multiple Andreev reflections (MAR). At higher temperatures, anomalies of the current noise develop at the gap subharmonics, eV = 2Delta/n. The crossover to the hot electron regime from the MAR regime is analyzed in the limit of small applied voltages.

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preprint2000arXiv

Circuit theory of multiple Andreev reflections in diffusive SNS junctions: the incoherent case

The incoherent regime of Multiple Andreev Reflections (MAR) is studied in long diffusive SNS junctions at applied voltages larger than the Thouless energy. Incoherent MAR is treated as a transport problem in energy space by means of a circuit theory for an equivalent electrical network. The current through NS interfaces is explained in terms of diffusion flows of electrons and holes through tunnel and Andreev resistors. These resistors in diffusive junctions play roles analogous to the normal and Andreev reflection coefficients in OTBK theory for ballistic junctions. The theory is applied to the subharmonic gap structure (SGS); simple analytical results are obtained for the distribution function and current spectral density for the limiting cases of resistive and transparent NS interfaces. In the general case, the exact solution is found in terms of chain-fractions, and the current is calculated numerically. SGS shows qualitatively different behavior for even and odd subharmonic numbers, and the maximum slopes of the differential resistance correspond to the gap subharmonics. The influence of inelastic scattering on the subgap anomalies of the differential resistance is analyzed.

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preprint1999arXiv

Multiple Andreev reflections and enhanced shot noise in diffusive SNS junctions

We study the dc conductance and current fluctuations in diffusive voltage biased SNS junctions with a tunnel barrier inside the mesoscopic normal region. We find that at subgap voltages, eV<2Delta/n, the current associated with the chain of n Andreev reflections is mapped onto the quasiparticle flow through a structure of n+1 voltage biased barriers connected by diffusive conductors. As a result, the current-voltage characteristic of a long SNINS structure obeys Ohm's law, in spite of the complex multiparticle transport process. At the same time, nonequilibrium heating of subgap electrons produces giant shot noise with pronounced subharmonic gap structure which corresponds to stepwise growth of the effective transferred charge. At eV\to 0, the shot noise approaches the magnitude of the Johnson-Nyquist noise with the effective temperature T^*=Delta/3, and the effective charge increases as (e/3)(1 + 2Delta/eV), with the universal ``one third suppression'' factor. We analyse the role of inelastic scattering and present a criterion of strong nonequilibrium.

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preprint1999arXiv

On the theory of Josephson effect in a diffusive tunnel junction

Specific features of the equilibrium current-carrying state of a Josephson tunnel junction between diffusive superconductors are studied theoretically in the 1D geometry. It is found that the Josephson current induces localized states of electron excitations in the vicinity of the tunnel barrier, which are a continuous analog of Andreev levels in a ballistic junction. The depth of the corresponding ``potential well'' is much greater than the separation between an Andreev level and the continuous energy spectrum boundary for the same transmissivity of the barrier. In contrast to a ballistic junction in which the Josephson current is transported completely by localized excitations, the contribution to current in a diffusive junction comes from whole spectral region near the energy gap boundary, where the density of states differs considerably from its unperturbed value. The correction to the Josephson current in the second order of the barrier transmissivity, which contains the second harmonic of the phase jump, is calculated and it is found that the true expansion parameter of the perturbation theory for a diffusive junction is not the tunneling probability $Γ$ itself, but a much larger parameter $W = (3ξ_0/4l)Γ$.

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