Researcher profile

E. Kirk

E. Kirk contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2020arXiv

Anisotropy induced spin re-orientation in chemically-modulated amorphous ferrimagnetic films

The ability to tune the competition between the in-plane and out-of-plane orientation of magnetization provides a means to construct thermal sensors with a sharp spin re-orientation transition at specific temperatures. We have observed such a tuneable, temperature driven spin re-orientation in structurally amorphous, ferrimagnetic rare earth-transition metal (RE-TM) alloy thin films using scanning transmission X-ray microscopy (STXM) and magnetic measurements. The nature of the spin re-orientation transition in FeGd can be fully explained by a non-equilibrium, nanoscale modulation of the chemical composition of the films. This modulation leads to a magnetic domain pattern of nanoscale speckles superimposed on a background of in-plane domains that form Laudau configurations in micron-scale patterned elements. It is this speckle magnetic structure that gives rise to a sharp two step-reversal mechanism that is temperature dependent. The possibility to balance competing anisotropies through the temperature opens opportunities to create and manipulate topological spin textures.

preprint2011arXiv

Sub-nanosecond Electron Emission from Electrically Gated Field Emitting Arrays

Field Emitting Arrays (FEAs) are a promising alternative to the conventional cathodes in different vacuum electronic devices such as traveling wave tubes, electron accelerators and etc. Electrical gating and modulation capabilities, together with the ability to produce stable and homogeneous electron beam in high electric field environment are the key requirements for their practical application. Due to relatively high gate capacitance, fast controlling of FEA emission is difficult. In order to achieve sub-nanosecond, electrically controlled, FEA based electron emission a special pulsed gate driver was developed. Bipolar high voltage (HV)pulses are used to rapidly inject and remove charge form FEA gate electrode controlling quickly electron extraction gate voltage. Short electron emission pulses (<600 ps FWHM) were observed in low and high gradient (up to 12 MV/m) environment. First attempts were made to combine FEA based electron emission with radio frequency acceleration structures (1.5 GHz) using pulsed preacceleration. The gate driver design together with low inductance FEA chip contact system is described. The results obtained in low and high gradient experimental setups are presented and discussed.