Researcher profile

E. J. R. de Oliveira

E. J. R. de Oliveira contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 13 - Baseline
2works
0followers
2topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

2 published item(s)

preprint2014arXiv

Thermal Effects on Photon-Induced Quantum Transport

We theoretically investigate laser induced quantum transport in a two-level quantum dot attached to electric contacts. Our approach, based on nonequilibrium Green function technique, allows to include thermal effects on the photon-induced quantum transport and excitonic coherent dynamics. By solving a set of coupled integrodifferential equations, involving correlation and propagator functions, we obtain the photocurrent and the dot occupations as a function of time. The characteristic coherent Rabi oscillations are found in both occupations and photocurrent, with two distinct sources of decoherence: incoherent tunneling and thermal fluctuations. In particular, for increasing temperature the dot becomes more thermally occupied which shrinks the amplitude of the Rabi oscillations, due to Pauli blockade. Finally, due to the interplay between photon and thermal induced electron populations, the photocurrent can switch sign as time evolves and its stationary value can be maximized by tunning the laser intensity.

preprint2010arXiv

A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers

We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity band determining the extended ("metallic" transport) or localized (hopping by thermal excitation) nature of the states at and near the Fermi level. Magnetic order and resistivity are inter-related due to the influence of the spin polarization of the impurity band and the effect of the Zeeman splitting on the mobility edge. We obtain, for a given range of Mn concentration and carrier density, a "metallic" behavior in which the transport by extended carriers dominates at low temperature, and is dominated by the thermally excited localized carriers near and above the transition temperature. This gives rise to a conspicuous hump of the resistivity which has been experimentally observed and brings light onto the relationship between transport and magnetic properties of this material.