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E. J. G. Santos

E. J. G. Santos appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

3 published item(s)

preprint2023arXiv

Coherent Spin-Phonon Coupling in the Layered Ferrimagnet Mn3Si2Te6

We utilize ultrafast photoexcitation to drive coherent lattice oscillations in the layered ferrimagnetic crystal Mn3Si2Te6, which significantly stiffen below the magnetic ordering temperature. We suggest that this is due to an exchange-mediated contraction of the lattice, stemming from strong magneto-structural coupling in this material. Additionally, simulations of the transient incoherent dynamics reveal the importance of spin relaxation channels mediated by optical and acoustic phonon scattering. Our findings highlight the importance of spin-lattice coupling in van der Waals magnets and a promising route for their dynamic optical control through their intertwined electronic, lattice, and spin degrees of freedom.

preprint2010arXiv

Spin-Strain Phase Diagram of Defective Graphene

Using calculations on defective graphene from first principles, we herein consider the dependence of the properties of the monovacancy of graphene under isotropic strain, with a particular focus on spin moments. At zero strain, the vacancy shows a spin moment of 1.5 $μ_B$ that increases to $\sim$2 $μ_B$ when the graphene is in tension. The changes are more dramatic under compression, in that the vacancy becomes non-magnetic when graphene is compressed more than 2%. This transition is linked to changes in the atomic structure that occurs around vacancies, and is associated with the formation of ripples. For compressions slightly greater than 3%, this rippling leads to the formation of a heavily reconstructed vacancy structure that consists of two deformed hexagons and pentagons. Our results suggest that any defect-induced magnetism that occurs in graphene can be controlled by applying a strain, or some other mechanical deformations.

preprint2009arXiv

Magnetism of Substitutional Co Impurities in Graphene: Realization of Single $π$-Vacancies

We report {\it ab initio} calculations of the structural, electronic and magnetic properties of a graphene monolayer substitutionally doped with Co (Co$_{sub}$) atoms. We focus in Co because among traditional ferromagnetic elements (Fe, Co and Ni), only Co$_{sub}$ atoms induce spin-polarization in graphene. Our results show the complex magnetism of Co substitutional impurites in graphene, which is mapped into simple models such as the $π$-vacancy and Heisenberg model. The links established in our work can be used to bring into contact the engineering of nanostructures with the results of $π$-models in defective graphene. In principle, the structures considered here can be fabricated using electron irradiation or Ar$^+$ ion bombardment to create defects and depositing Co at the same time.