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E. J. Fox

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2 publications

preprint2015arXiv

Precise quantization of anomalous Hall effect near zero magnetic field

We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per 10,000 and longitudinal resistivity under 1 ohm per square, with chiral edge transport explicitly confirmed by non-local measurements. Deviations from this behavior are found to be caused by thermally-activated carriers, which can be eliminated by taking advantage of an unexpected magnetocaloric effect.

preprint2015arXiv

Resonant magneto-optic Kerr effect in the magnetic topological insulator Cr:(Sbx_x,Bi1−x_{1-x})2_2Te3_3

We report measurements of the polar Kerr effect, proportional to the out-of-plane component of the magnetization, in thin films of the magnetically doped topological insulator (Cr0.12Bi0.26Sb0.62)2Te3(\text{Cr}_{0.12}\text{Bi}_{0.26}\text{Sb}_{0.62})_2\text{Te}_3. Measurements of the complex Kerr angle, ΘKΘ_K, were performed as a function of photon energy in the range 0.8 eV<ℏω<3.0 eV0.8\text{ eV}<\hbarω<3.0\text{ eV}. We observed a peak in the real part of ΘK(ω)Θ_K(ω) and zero crossing in the imaginary part that we attribute to resonant interaction with a spin-orbit avoided crossing located ≈\approx 1.6 eV above the Fermi energy. The resonant enhancement allows measurement of the temperature and magnetic field dependence of ΘKΘ_K in the ultrathin film limit, d≥2d\geq2 quintuple layers. We find a sharp transition to zero remanent magnetization at 6 K for d<8d<8~QL, consistent with theories of the dependence of impurity spin interactions on film thickness and their location relative to topological insulator surfaces.

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