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Researcher profile

E. Grilli

E. Grilli contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2015arXiv

Spin-dependent direct gap emission in tensile-strained Ge films on Si substrates

The circular polarization of direct gap emission of Ge is studied in optically-excited tensile-strained Ge-on-Si heterostructures as a function of doping and temperature. Owing to the spin-dependent optical selection rules, the radiative recombinations involving strain-split light (cG-LH) and heavy hole (cG-HH) bands are unambiguously resolved. The fundamental cG-LH transition is found to have a low temperature circular polarization degree of about 85% despite an off-resonance excitation of more than 300 meV. By photoluminescence (PL) measurements and tight binding calculations we show that this exceptionally high value is due to the peculiar energy dependence of the optically-induced electron spin population. Finally, our observation of the direct gap doublet clarifies that the light hole contribution, previously considered to be negligible, can dominate the room temperature PL even at low tensile strain values of about 0.2%.

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preprint2013arXiv

Germanium crystals on silicon show their light

Germanium and silicon-germanium alloys have found entry into Si technology thanks to their compatibility with Si processing and their ability to tailor electronic properties by strain and band-gap engineering. Germanium's potential to extend Si functionalities, as exemplified by lasing action of strained-Ge on Si substrates, has brought the material back to attention. Yet despite these advances, non-radiative transitions, induced by crystal defects originating from the Ge/Si interface, continue to be a serious bottleneck. Here we demonstrate the drastic emission enhancement achieved via control and mitigation over the parasitic activity of defects in micronscale Ge/Si crystals. We unravel how defects affect interband luminescence and minimize their influence by controlling carrier diffusion with band-gap-engineered reflectors. We finally extended this approach designing efficient quantum well emitters. Our results pave the way for the large-scale implementation of advanced electronic and photonic structures unaffected by the ubiquitous presence of defects developed at epitaxial interfaces.

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preprint2013arXiv

Spin and energy relaxation in germanium studied by spin-polarized direct-gap photoluminescence

Spin orientation of photoexcited carriers and their energy relaxation is investigated in bulk Ge by studying spin-polarized recombination across the direct band gap. The control over parameters such as doping and lattice temperature is shown to yield high polarization degree, namely larger than 40%, as well as a fine-tuning of the angular momentum of the emitted light with a complete reversal between right- and left-handed circular polarization. By combining the measurement of the optical polarization state of band-edge luminescence and Monte Carlo simulations of carrier dynamics, we show that these very rich and complex phenomena are the result of the electron thermalization and cooling in the multi-valley conduction band of Ge. The circular polarization of the direct-gap radiative recombination is indeed affected by energy relaxation of hot electrons via the X valleys and the Coulomb interaction with extrinsic carriers. Finally, thermal activation of unpolarized L valley electrons accounts for the luminescence depolarization in the high temperature regime.

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preprint2011arXiv

Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin-polarization efficiencies and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct-gap photoluminescence exceeds the theoretical bulk limit, yielding ~37% and ~85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is found to be ~0.5 ps and it is governed by transitions between heavy and light hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5 ns below 150 K. Theoretical analysis of the electrons spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime.

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