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Researcher profile

E. García-Martín

E. García-Martín contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2021arXiv

Dynamics of Li deposition on epitaxial graphene/Ru(0001) islands

Li metal has been deposited on the surface of a Ru(0001) single crystal containing patches of monolayer-thick epitaxial graphene islands. The use of low-energy electron microscopy and diffraction allowed us to {\em in situ} monitor the process by measuring the local work function as well as to study the system in real and reciprocal space, comparing the changes taking place on the graphene with those on the bare Ru(0001) surface. It is found that Li deposition decreases the work function of the graphene islands but to a much smaller degree than of the Ru(0001) surface, as corresponds to its intercalation below the graphene overlayer. Finally, the diffusion process of Li out of the graphene islands has been monitored by photoelectron microscopy using a visible-light laser.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

RBS/Channeling characterization of Ru(0001) and thin epitaxial Ru/Al$_2$O$_3$(0001) films

Thin epitaxial films of metals on insulating substrates are essential for many applications, as conducting layers, in magnetic devices or as templates for further growth. In this work, we report on the growth of epitaxial Ru films on single-crystalline Al$_2$O$_3$(0001) substrates by magnetron sputtering and their subsequent systematic characterization using Rutherford backscattering spectrometry of He ions both in random and in channeling conditions. We include results of a Ru(0001) single crystal for comparison. Analysis of channeling shows that films thicker than 35 nm grow with (0001) orientation, a well-defined epitaxial relation with the substrate and a high degree of crystal quality, comparable to the Ru(0001) single crystal. Thinner films of down to 7 nm in thickness, for which relaxation of epitaxial strain is not complete, produce a similar degree of dechanneling. The surface of the films can be prepared in a clean and ordered state in order to allow further epitaxial growth on top.

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