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E. Castaño

E. Castaño contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall physics.class-ph

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preprint2014arXiv

Random matrix study for a three-terminal chaotic device

We perform a study based on a random-matrix theory simulation for a three-terminal device, consisting of chaotic cavities on each terminal. We analyze the voltage drop along one wire with two chaotic mesoscopic cavities, connected by a perfect conductor, or waveguide, with one open mode. This is done by means of a probe, which also consists of a chaotic cavity that measure the voltage in different configurations. Our results show significant differences with respect to the disordered case, previously considered in the literature.

preprint2012arXiv

Möbius transformations and electronic transport properties of large disorderless networks

We show that the key transport states, insulating and conducting, of large regular networks of scatterers can be described generically by negative and zero Lyapunov exponents, respectively, of Möbius maps that relate the scattering matrix of systems with successive sizes. The conductive phase is represented by weakly chaotic attractors that have been linked with anomalous transport and ergodicity breaking. Our conclusions, verified for serial as well as parallel stub and ring structures, reveal that mesoscopic behavior results from a drastic reduction of degrees of freedom.

preprint2011arXiv

Scattering matrix of elliptically polarized waves

We analyze the scattering of elliptically polarized plane waves normally incident at the planar interface between two different materials; we consider two cases: dielectric-dielectric and dielectric-conductor interfaces. The scattering matrix S in both cases is obtained using the boundary conditions and Poynting's theorem. In the dielectric-dielectric case we write S using two different basis, the usual xy and a rotated one. For the dielectric-conductor interface, the use of the rotated basis together with an energy balance argument leads us, in a natural way, to construct a unitary S matrix after recognizing the need to introduce two equivalent parasitic channels due to dissipation in the conductor, and the transmission coefficient into these parasitic channels measures the absorption strength.