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E. A. Zhukov

E. A. Zhukov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciquant-phcond-mat.other

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Published work

11 published item(s)

preprint2022arXiv

Spin dynamics of electrons and holes interacting with nuclei in MAPbI$_3$ perovskite single crystals

Methylammonium lead triiodine (MAPbI$_3$) is a material representative of the hybrid organic-inorganic lead halide perovskites which attract currently great attention due to their photovoltaic efficiency and bright optoelectronic properties. Here, the coherent spin dynamics of charge carriers and spin dependent phenomena induced by the carrier interaction with nuclear spins are studied in MAPbI$_3$ single crystals, using time-resolved Kerr rotation at cryogenic temperatures in magnetic fields up to 3 T. Spin dephasing times up to a few nanoseconds and a longitudinal spin relaxation time of 37 ns are measured. The Larmor spin precession of both resident electrons and holes is identified in the Kerr rotation signals. The Landé factors ($g$-factors) in the orthorhombic crystal phase show a strong anisotropy, ranging for the holes from $-0.28$ to $-0.71$ and for the electrons from $+2.46$ to $+2.98$, while the $g$-factor dispersion of about 1% is rather small. An exciton $g$-factor of $+2.3$ is measured by magneto-reflectivity. A dynamic nuclear polarization by means of spin polarized electrons and holes is achieved in tilted magnetic fields giving access to the carrier-nuclei exchange interaction and the nuclei spin relaxation time exceeding 16 minutes.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap

The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of electric current on optical orientation of electrons in AlGaAs/GaAs heterostructure

The effect of a lateral electric current on the photoluminescence H-band of an AlGaAs/GaAs heterostructure is investigated. The photoluminescence intensity and optical orientation of electrons contributing to the H-band are studied by means of continuous wave and time-resolved photoluminescence spectroscopy and time-resolved Kerr rotation. It is shown that the H-band is due to recombination of the heavy holes localized at the heterointerface with photoexcited electrons attracted to the heterointerface from the GaAs layer. Two lines with significantly different decay times constitute the H-band: a short-lived high-energy one and a long-lived low-energy one. The high-energy line originates from recombination of electrons freely moving along the structure plane, while the low-energy one is due to recombination of donor-bound electrons near the interface. Application of the lateral electric field of ~ 100-200 V/cm results in a quenching of both lines. This quenching is due to a decrease of electron concentration near the heterointerface as a result of a photocurrent-induced heating of electrons in the GaAs layer. On the contrary, electrons near the heterointerface are effectively cooled, so the donors near the interface are not completely empty up to ~ 100 V/cm, which is in stark contrast with the case of bulk materials. The optical spin polarization of the donor-bound electrons near the heterointerface weakly depends on the electric field. Their polarization kinetics is determined by the spin dephasing in the hyperfine fields of the lattice nuclei. The long spin memory time (> 40 ns) can be associated with suppression of the Bir-Aronov-Pikus mechanism of spin relaxation for electrons.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin polarization recovery and Hanle effect for charge carriers interacting with nuclear spins in semiconductors

We report on theoretical and experimental study of the spin polarization recovery and Hanle effect for the charge carriers interacting with the fluctuating nuclear spins in the semiconductor structures. We start the theoretical description from the simplest model of static and isotropic nuclear spin fluctuations. Then we describe the modification of the polarization recovery and Hanle curves due to the anisotropy of the hyperfine interaction, finite nuclear spin correlation time, and the strong pulsed spin excitation. For the latter case, we describe the resonance spin amplification effect in the Faraday geometry and discuss the manifestations of the quantum Zeno effect. The set of the experimental results for various structures and experimental conditions is chosen to highlight the specific effects predicted theoretically. We show that the spin polarization recovery is a very valuable tool for addressing carrier spin dynamics in semiconductors and their nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Dynamics of nuclear spin polarization induced and detected by coherently precessing electron spins in fluorine-doped ZnSe

We study the dynamics of optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer via time-resolved Kerr rotation. The nuclear polarization in the vicinity of a fluorine donor is induced by interaction with coherently precessing electron spins in a magnetic field applied in the Voigt geometry. It is detected by nuclei-induced changes in the electron spin coherence signal. This all-optical technique allows us to measure the longitudinal spin relaxation time $T_{1}$ of the $^{77}\text{Se}$ isotope in a magnetic field range from 10 to 130~mT under illumination. We combine the optical technique with radio frequency methods to address the coherent spin dynamics of the nuclei and measure Rabi oscillations, Ramsey fringes and the nuclear spin echo. The inhomogeneous spin dephasing time $T_{2}^{*}$ and the spin coherence time $T_{2}$ of the $^{77}\text{Se}$ isotope are measured. While the $T_{1}$ time is on the order of several milliseconds, the $T_{2}$ time is several hundred microseconds. The experimentally determined condition $T_{1}\gg T_{2}$ verifies the validity of the classical model of nuclear spin cooling for describing the optically-induced nuclear spin polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Large anisotropy of electron and hole g factors in infrared-emitting InAs/InAlGaAs self-assembled quantum dots

A detailed study of the $g$-factor anisotropy of electrons and holes in InAs/In$_{0.53}$Al$_{0.24}$Ga$_{0.23}$As self-assembled quantum dots emitting in the telecom spectral range of $1.5-1.6$ $μ$m (around 0.8 eV photon energy) is performed by time-resolved pump-probe ellipticity technique using a superconducting vector magnet. All components of the $g$-factor tensors are measured, including their spread in the quantum dot (QD) ensemble. Surprisingly, the electron $g$ factor shows a large anisotropy changing from $g_{\mathrm{e},x}= -1.63$ to $g_{\mathrm{e},z}= -2.52$ between directions perpendicular and parallel to the dot growth axis, respectively, at an energy of 0.82 eV. The hole $g$-factor anisotropy at this energy is even stronger: $|g_{\text{h},x}|= 0.64$ and $|g_{\text{h},z}|= 2.29$. On the other hand, the in-plane anisotropies of electron and hole $g$ factors are small. The pronounced out-of-plane anisotropy is also observed for the spread of the $g$ factors, determined from the spin dephasing time. The hole longitudinal $g$ factors are described with a theoretical model that allows us to estimate the QD parameters. We find that the QD height-to-diameter ratio increases while the indium composition decreases with increasing QD emission energy.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Optical orientation of hole magnetic polarons in (Cd,Mn)Te/(Cd,Mn,Mg)Te quantum wells

The optically induced spin polarization in (Cd,Mn)Te/(Cd,Mn,Mg)Te diluted-magnetic-semiconductor quantum wells is investigated by means of picosecond pump-probe Kerr rotation. At 1.8 K temperature, additionally to the oscillatory signals from photoexcited electrons and Manganese spins precessing about an external magnetic field, a surprisingly long-lived (up to 60 ns) nonoscillating spin polarization is detected. This polarization is related to optical orientation of equilibrium magnetic polarons involving resident holes. The suggested mechanism for the optical orientation of the equilibrium magnetic polarons indicates that the detected polaron dynamics originates from unexcited magnetic polarons. The polaron spin dynamics is controlled by the anisotropic spin structure of the heavy-hole resulting in a freezing of the polaron magnetic moment in one of the two stable states oriented along the structure growth axis. Spin relaxation between these states is prohibited by a potential barrier, which depends on temperature and magnetic field. The magnetic polaron relaxation is accelerated with increasing temperature and in magnetic field.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Inhomogeneous nuclear spin polarization induced by helicity-modulated optical excitation of fluorine-bound electron spins in ZnSe

Optically-induced nuclear spin polarization in a fluorine-doped ZnSe epilayer is studied by time-resolved Kerr rotation using resonant excitation of donor-bound excitons. Excitation with helicity-modulated laser pulses results in a transverse nuclear spin polarization, which is detected as a change of the Larmor precession frequency of the donor-bound electron spins. The frequency shift in dependence on the transverse magnetic field exhibits a pronounced dispersion-like shape with resonances at the fields of nuclear magnetic resonance of the constituent zinc and selenium isotopes. It is studied as a function of external parameters, particularly of constant and radio frequency external magnetic fields. The width of the resonance and its shape indicate a strong spatial inhomogeneity of the nuclear spin polarization in the vicinity of a fluorine donor. A mechanism of optically-induced nuclear spin polarization is suggested based on the concept of resonant nuclear spin cooling driven by the inhomogeneous Knight field of the donor-bound electron.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Longitudinal and transversal spin dynamics of donor-bound electrons in fluorine-doped ZnSe: spin inertia versus Hanle effect

The spin dynamics of the strongly localized, donor-bound electrons in fluorine-doped ZnSe epilayers is studied by pump-probe Kerr rotation techniques. A method exploiting the spin inertia is developed and used to measure the longitudinal spin relaxation time, $T_1$, in a wide range of magnetic fields, temperatures, and pump densities. The $T_1$ time of the donor-bound electron spin of about 1.6 $μ$s remains nearly constant for external magnetic fields varied from zero up to 2.5 T (Faraday geometry) and in a temperature range $1.8-45$ K. The inhomogeneous spin dephasing time, $T_2^*=8-33$ ns, is measured using the resonant spin amplification and Hanle effects under pulsed and steady-state pumping, respectively. These findings impose severe restrictions on possible spin relaxation mechanisms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

All-optical NMR in semiconductors provided by resonant cooling of nuclear spins interacting with electrons in the resonant spin amplification regime

Resonant cooling of different nuclear isotopes manifested in optically-induced nuclear magnetic resonances (NMR) is observed in n-doped CdTe/(Cd,Mg)Te and ZnSe/(Zn,Mg)Se quantum wells and for donor-bound electrons in ZnSe:F and GaAs epilayers. By time-resolved Kerr rotation used in the regime of resonant spin amplification we can expand the range of magnetic fields where the effect can be observed up to nuclear Larmor frequencies of 170 kHz. The mechanism of the resonant cooling of the nuclear spin system is analyzed theoretically. The developed approach allows us to model the resonant spin amplification signals with NMR resonances.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Optical control of electron spin coherence in CdTe/(Cd,Mg)Te quantum wells

Optical control of the spin coherence of quantum well electrons by short laser pulses with circular or linear polarization is studied experimentally and theoretically. For that purpose the coherent electron spin dynamics in a n-doped CdTe/(Cd,Mg)Te quantum well structure was measured by time-resolved pump-probe Kerr rotation, using resonant excitation of the negatively charged exciton (trion) state. The amplitude and phase shifts of the electron spin beat signal in an external magnetic field, that are induced by laser control pulses, depend on the pump-control delay and polarization of the control relative to the pump pulse. Additive and non-additive contributions to pump-induced signal due to the control are isolated experimentally. These contributions can be well described in the framework of a two-level model for the optical excitation of the resident electron to the trion.

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