Researcher profile

Dongsheng Cai

Dongsheng Cai contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2021arXiv

Parameters Fixing Strategy for Quantum Approximate Optimization Algorithm

The quantum approximate optimization algorithm (QAOA) has numerous promising applications in solving the combinatorial optimization problems on near-term Noisy Intermediate Scalable Quantum (NISQ) devices. QAOA has a quantum-classical hybrid structure. Its quantum part consists of a parameterized alternating operator ansatz, and its classical part comprises an optimization algorithm, which optimizes the parameters to maximize the expectation value of the problem Hamiltonian. This expectation value depends highly on the parameters, this implies that a set of good parameters leads to an accurate solution. However, at large circuit depth of QAOA, it is difficult to achieve global optimization due to the multiple occurrences of local minima or maxima. In this paper, we propose a parameters fixing strategy which gives high approximation ratio on average, even at large circuit depths, by initializing QAOA with the optimal parameters obtained from the previous depths. We test our strategy on the Max-cut problem of certain classes of graphs such as the 3-regular graphs and the Erdös-Rényi graphs.

preprint2016arXiv

Collisionless electron-ion shocks in relativistic unmagnetized jet-ambient interactions: Non-thermal electron injection by double layer

The course of non-thermal electron ejection in relativistic unmagnetized electron-ion shocks is investigated by performing self-consistent particle-in-cell simulations. The shocks are excited through the injection of relativistic jet into ambient plasma, leading to two distinct shocks (named as the trailing shock and leading shock) and a contact discontinuity. The Weibel-like instabilities heat the electrons up to approximately half of ion kinetic energy. The double layers formed in the trailing and leading edges then accelerated the electrons by the ion kinetic energy. The electron distribution function in the leading edge shows a clear non-thermal power-law tail which contains $\sim1\%$ of electrons and $\sim8\%$ of electron energy. Its power-law index is -2.6. The acceleration efficiency is $\sim23\%$ by number and $\sim50\%$ by energy and the power-law index is -1.8 for electron distribution function in the trailing edge. The effect of the dimensionality is examined by comparing results of 3D simulation with 2D ones. It exhibits that the electron acceleration is more efficient in 2D.

preprint2015arXiv

Collisionless Weibel shocks and electron acceleration in gamma-ray bursts

A study of collisionless external shocks in gamma-ray bursts is presented. The shock structure, electromagnetic fields, and process of electron acceleration are assessed by performing a self-consistent 3D particle-in-cell (PIC) simulation. In accordance with hydrodynamic shock systems, the shock consists of a reverse shock (RS) and forward shock (FS) separated by a contact discontinuity (CD). The development and structure are controlled by the ion Weibel instability. The ion filaments are sources of strong transverse electromagnetic fields at both sides of the double shock structure over a length of 30 - 100 ion skin depths. Electrons are heated up to a maximum energy $ε_{\rm ele}\approx \sqrt{ε_{\rm b}}$, where $ε$ is the energy normalized to the total incoming energy. Jet electrons are trapped in the RS transition region due to the presence of an ambipolar electric field and reflection by the strong transverse magnetic fields in the shocked region. In a process similar to shock surfing acceleration (SSA) for ions, electrons experience drift motion and acceleration by ion filament transverse electric fields in the plane perpendicular to the shock propagation direction. Ultimately accelerated jet electrons are convected back into the upstream.