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Dongmok Whang

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cond-mat.mes-hall cond-mat.mtrl-sci physics.chem-ph

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preprint2020arXiv

Morphology of Ti on Monolayer Nanocrystalline Graphene and its Unexpectedly Low Hydrogen Adsorption

Hydrogen adsorption on graphene can be increased by functionalization with Ti. This requires dispersing Ti islands on graphene as small and dense as possible, in order to increase the number of hydrogen adsorption sites per Ti atom. In this report, we investigate the morphology of Ti on nanocrystalline graphene and its hydrogen adsorption by scanning tunneling microscopy and thermal desorption spectroscopy, and compare the results with equivalent measurements on single-crystalline graphene. Nanocrystalline graphene consists of extremely small crystal grains of < 5 nm size. Ti atoms preferentially adsorb at the grain boundaries of nanocrystalline graphene and form smaller and denser islands compared to single-crystalline graphene. Surprisingly, however, hydrogen adsorbs less to Ti on nanocrystalline graphene than to Ti on single-crystalline graphene. In particular, hydrogen hardly chemisorbs to 1 ML of Ti on nanocrystalline graphene. This may be attributed to strong bonds between Ti and defects located along the grain boundaries in nanocrystalline graphene. This mechanism might apply to other metals, as well, and therefore our results suggest that when functionalizing graphene by metal atoms for the purpose of hydrogen storage or other chemical reactions, it is important to consider not only the morphology of the resulting surface, but also the influence of graphene on the electronic states of the metal.

preprint2015arXiv

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene layer on a Wide-Band Gap Semiconductor

Vertical and lateral heterogeneous structures of two-dimensional (2D) materials have paved the way for pioneering studies on the physics and applications of 2D materials. A hybridized hexagonal boron nitride (h-BN) and graphene lateral structure, a heterogeneous 2D structure, has been fabricated on single-crystal metals or metal foils by chemical vapor deposition (CVD). However, once fabricated on metals, the h-BN/graphene lateral structures require an additional transfer process for device applications, as reported for CVD graphene grown on metal foils. Here, we demonstrate that a single-crystal h-BN/graphene lateral structure can be epitaxially grown on a wide-gap semiconductor, SiC(0001). First, a single-crystal h-BN layer with the same orientation as bulk SiC was grown on a Si-terminated SiC substrate at 850 oC using borazine molecules. Second, when heated above 1150 oC in vacuum, the h-BN layer was partially removed and, subsequently, replaced with graphene domains. Interestingly, these graphene domains possess the same orientation as the h-BN layer, resulting in a single-crystal h-BN/graphene lateral structure on a whole sample area. For temperatures above 1600 oC, the single-crystal h-BN layer was completely replaced by the single-crystal graphene layer. The crystalline structure, electronic band structure, and atomic structure of the h-BN/graphene lateral structure were studied by using low energy electron diffraction, angle-resolved photoemission spectroscopy, and scanning tunneling microscopy, respectively. The h-BN/graphene lateral structure fabricated on a wide-gap semiconductor substrate can be directly applied to devices without a further transfer process, as reported for epitaxial graphene on a SiC substrate.