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Dongkyun Ko

Dongkyun Ko appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

2 published item(s)

preprint2011arXiv

Comprehensive Control of Optical Polarization Anisotropy in Semiconducting Nanowires

The demonstration of strong photoluminescence polarization anisotropy in semiconducting nanowires embodies both technological promise and scientific challenge. Here we present progress on both fronts through the study of the photoluminescence polarization anisotropy of randomly oriented nanowire ensembles in materials without/with crystalline anisotropy, small/wide bandgap, and both III-V/II-VI chemistry (InP/ZnO nanowires, respectively). Comprehensive control of the polarization anisotropy is realized by dielectric matching with conformally deposited Ta2O5 (dielectric ratios of 9.6:4.41 and 4.0:4.41 for InP and ZnO, respectively). After dielectric matching, the polarization anisotropy of the nanowire ensembles is reduced by 86% for InP:Ta2O5 and 84% for ZnO:Ta2O5.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Defect states and disorder in charge transport in semiconductor nanowires

We present a comprehensive investigation into disorder-mediated charge transport in InP nanowires in the statistical doping regime. At zero gate voltage transport is well described by the space charge limited current model and Efros-Shklovskii variable range hopping, but positive gate voltage (electron accumulation) reveals a previously unexplored regime of nanowire charge transport that is not well described by existing theory. The ability to continuously tune between these regimes provides guidance for the extension of existing models and directly informs the design of next-generation nanoscale electronic devices.

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