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Dong-Bang Tsai

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2 published item(s)

preprint2012arXiv

A quantum effect in the classical limit: nonequilibrium tunneling in the Duffing oscillator

For suitable parameters, the classical Duffing oscillator has a known bistability in its stationary states, with low- and high-amplitude branches. As expected from the analogy with a particle in a double-well potential, transitions between these states become possible either at finite temperature, or in the quantum regime due to tunneling. In this analogy, besides local stability, one can also discuss global stability by comparing the two potential minima. For the Duffing oscillator, the stationary states emerge dynamically so that a priori, a potential-minimum criterion for them does not exist. However, global stability is still relevant, and definable as the state containing the majority population for long times, low temperature, and close to the classical limit. Further, the crossover point is the parameter value at which global stability abruptly changes from one state to the other. For the double-well model, the crossover point is defined by potential-minimum degeneracy. Given that this analogy is so effective in other respects, it is thus striking that for the Duffing oscillator, the crossover point turns out to be non-unique. Rather, none of the three aforementioned limits commute with each other, and the limiting behaviour depends on the order in which they are taken. More generally, as both $\hbar\To0$ and $T\To0$, the ratio $\hbarω_0/k_\mathrm{B}T$ continues to be a key parameter and can have any nonnegative value. This points to an apparent conceptual difference between equilibrium and nonequilibrium tunneling. We present numerical evidence by studying the pertinent quantum master equation in the photon-number basis. Independent verification and some further understanding are obtained using a semi-analytical approach in the coherent-state representation.

preprint2009arXiv

Optimal control of the silicon-based donor electron spin quantum computing

We demonstrate how gradient ascent pulse engineering optimal control methods can be implemented on donor electron spin qubits in Si semiconductors with an architecture complementary to the original Kane's proposal. We focus on the high-fidelity controlled-NOT (CNOT) gate and explicitly find its digitized control sequences by optimizing its fidelity over the external controls of the hyperfine A and exchange J interactions. This high-fidelity CNOT gate has an error of about $10^{-6}$, below the error threshold required for fault-tolerant quantum computation, and its operation time of 100ns is about 3 times faster than 297ns of the proposed global control scheme. It also relaxes significantly the stringent distance constraint of two neighboring donor atoms of 10~20nm as reported in the original Kane's proposal to about 30nm in which surface A and J gates may be built with current fabrication technology. The effects of the control voltage fluctuations, the dipole-dipole interaction and the electron spin decoherence on the CNOT gate fidelity are also discussed.