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Dominik Szczȩśniak

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cond-mat.mes-hall cond-mat.supr-con quant-ph

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preprint2020arXiv

Gap states and valley-spin filtering in transition metal dichalcogenide monolayers

The magnetically-induced valley-spin filtering in transition metal dichalcogenide monolayers ( $MX_{2}$ , where $M$ =Mo, W and $X$ =S, Se, Te) promises new paradigm in information processing. However, the detailed understanding of this effect is still limited, regarding its underlying transport processes. Herein, it is suggested that the filtering mechanism can be greately elucidated by the concept of metal-induced gap states (MIGS), appearing in the electrode-terminated $MX_{2}$ materials {\it i.e.} the referential filter setup. In particular, the gap states are predicted here to mediate valley- and spin-resolved charge transport near the ideal electrode/ $MX_{2}$ interface, and therefore to initiate filtering. It is also argued that the role of MIGS increases when the channel length is diminished, as they begin to govern the overall valley-spin transport in the tunneling regime. In what follows, the presented study yields fundamental scaling trends for the valley-spin selectivity with respect to the intrinsic physics of the filter materials. As a result, it facilitates insight into the analyzed effects and provide design guidelines toward efficient valley-spin filter devices, that base on the discussed materials or other hexagonal monolayers with a broken inversion symmetry.

preprint2020arXiv

Magnetic flux noise in superconducting qubits and the gap states continuum

In the present study we investigate the selected local aspects of the metal-induced gap states (MIGSs) at the disordered metal-insulator interface, that were previously proposed to produce magnetic moments responsible for the magnetic flux noise in some of the superconducting qubit modalities. Our analysis attempts to supplement the available studies and provide new theoretical contribution toward their validation. In particular, we explicitly discuss the behavior of the MIGSs in the momentum space as a function of the local onsite energy deviation, that mimics random potential disorder at the interface. It is found, that when the difference between the characteristic electronic potentials in the insulator increases, the corresponding MIGSs become more localized. This effect is associated with the increasing degree of the potential disorder that was earlier observed to produce highly localized MIGSs in the superconducting qubits. At the same time, the presented findings show that the disorder-induced localization of the MIGSs can be related directly to the decay characteristics of these states as well as to the bulk electronic properties of the insulator. As a result, our study reinforces plausibility of the previous corresponding investigations on the origin of the flux noise, but also allows to draw future directions toward their better verification.

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