Researcher profile

Dominik Suszalski

Dominik Suszalski contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Graphene disk in a solenoid magnetic potential: Aharonov-Bohm effect without a two-slit-like setup

The Aharonov-Bohm effect allows one to demonstrate the physical meaningfulness of magnetic vector potential by passing the current in zero magnetic field regions. In the standard (a {\em two-slit-like}) setup a conducting ring is pierced by magnetic flux and the quantum interference for an electron passing simultaneously the two ring arms is observed. Here we show, by analyzing the transport via evanescent waves, that the ballistic Corbino disk in graphene subjected to a solenoid magnetic potential may exhibit the conductance oscillations of the Aharonov-Bohm kind although the current flows through a single conducting element only.

preprint2019arXiv

Conductivity scaling and the effects of symmetry-breaking terms in bilayer graphene Hamiltonian

We study the ballistic conductivity of bilayer graphene in the presence of symmetry-breaking terms in effective Hamiltonian for low-energy excitations, such as the trigonal-warping term ($γ_3$), the electron-hole symmetry breaking interlayer hopping ($γ_4$), and the staggered potential ($δ_{AB}$). Earlier, it was shown that for $γ_3\neq{}0$, in the absence of remaining symmetry-breaking terms (i.e., $γ_4=δ_{AB}=0$), the conductivity ($σ$) approaches the value of $3σ_0$ for the system size $L\rightarrow{}\infty$ (with $σ_0=8e^2/(πh)$ being the result in the absence of trigonal warping, $γ_3=0$). We demonstrate that $γ_4\neq{}0$ leads to the divergent conductivity if $γ_3\neq{}0$, or to the vanishing conductivity if $γ_3=0$. For realistic values of the tight-binding model parameters, $γ_3=0.3\,$eV, $γ_4=0.15\,$eV (and $δ_{AB}=0$), the conductivity values are in the range of $σ/σ_0\approx{}4-5$ for $100\,$nm$\ <L<1\,μ$m, in agreement with existing experimental results. The staggered potential ($δ_{AB}\neq{}0$) suppresses zero-temperature transport, leading to $σ\rightarrow{}0$ for $L\rightarrow{}\infty$. Although $σ=σ(L)$ is no longer universal, the Fano factor approaches the pseudodiffusive value ($F\rightarrow{}1/3$ for $L\rightarrow{}\infty$) in any case with non-vanishing $σ$ (otherwise, $F\rightarrow{}1$) signaling the transport is ruled by evanescent waves. Temperature effects are briefly discussed in terms of a phenomenological model for staggered potential $δ_{AB}=δ_{AB}(T)$ showing that, for $0<T\leqslant{}T_c\approx{}12\,$K and $δ_{AB}(0)=1.5\,$meV, $σ(L)$ is noticeably affected by $T$ for $L\gtrsim{}100\,$nm.

preprint2019arXiv

Mesoscopic valley filter in graphene Corbino disk containing a p-n junction

The Corbino geometry allows one to investigate the propagation of electric current along a p-n interface in ballistic graphene in the absence of edge states appearing for the familiar Hall-bar geometry. Using the transfer matrix in the angular-momentum space we find that for sufficiently strong magnetic fields the current propagates only in one direction, determined by the magnetic field direction and the interface orientation, and the two valleys, K and K&#39;, are equally occupied. Spatially-anisotropic effective mass may suppress one of the valley currents, selected by the external electric field, transforming the system into a mesoscopic version of the valley filter. The filtering mechanism can be fully understood within the effective Dirac theory, without referring to atomic-scale effects which are significant in proposals operating on localized edge states.

preprint2016arXiv

Different lattice geometries with synthetic dimension

The possibility of creating different geometries with the help of an extra synthetic dimension in optical lattices is studied. Additional linear potential and Raman assisted tunnelings are used to engineer well controlled tunnelings between available states. The great flexibility of the system allows us to obtain different geometries of synthetic lattices with possibility of adding synthetic gauge fields.