Conductivity scaling and the effects of symmetry-breaking terms in bilayer graphene Hamiltonian
We study the ballistic conductivity of bilayer graphene in the presence of symmetry-breaking terms in effective Hamiltonian for low-energy excitations, such as the trigonal-warping term (γ3), the electron-hole symmetry breaking interlayer hopping (γ4), and the staggered potential (δAB). Earlier, it was shown that for γ3=0, in the absence of remaining symmetry-breaking terms (i.e., γ4=δAB=0), the conductivity (σ) approaches the value of 3σ0 for the system size L→∞ (with σ0=8e2/(πh) being the result in the absence of trigonal warping, γ3=0). We demonstrate that γ4=0 leads to the divergent conductivity if γ3=0, or to the vanishing conductivity if γ3=0. For realistic values of the tight-binding model parameters, γ3=0.3eV, γ4=0.15eV (and δAB=0), the conductivity values are in the range of σ/σ0≈4−5 for 100nm <L<1μm, in agreement with existing experimental results. The staggered potential (δAB=0) suppresses zero-temperature transport, leading to σ→0 for L→∞. Although σ=σ(L) is no longer universal, the Fano factor approaches the pseudodiffusive value (F→1/3 for L→∞) in any case with non-vanishing σ (otherwise, F→1) signaling the transport is ruled by evanescent waves. Temperature effects are briefly discussed in terms of a phenomenological model for staggered potential δAB=δAB(T) showing that, for 0<T⩽Tc≈12K and δAB(0)=1.5meV, σ(L) is noticeably affected by T for L≳100nm.