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Dmitry A. Ryndyk

Dmitry A. Ryndyk appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

7 published item(s)

preprint2020arXiv

On-surface synthesis of nitrogen-doped nanographenes with 5-7 membered rings

We report on the formation of nitrogen-doped nanographenes containing five- and seven-membered rings by thermally induced cyclodehydrogenation on the Au(111) surface. Using scanning tunneling microscopy and supported by calculations, we investigated the structure of precursor and targets, as well as of intermediates. Scanning tunneling spectroscopy shows that the electronic properties of the target nanographenes are strongly influenced by the additional formation of non-hexagonal rings.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Enhanced thermoelectric figure of merit in polycrystalline carbon nanostructures

Grain boundaries are commonly observed in carbon nanostructures, but their influence on thermal and electric properties are still not completely understood. Using a combined approach of density functional tight-binding theory and non-equilibrium Green functions we investigate electron and phonon transport in carbon based systems. In this work, quantum transport and thermoelectric properties are summarized for graphene sheets, graphene nanoribbons and carbon nanotubes with a variety of grain boundary types in a wide temperature range. Motivated by previous findings that disorder scatters phonons more effectively than electrons, a significant improvement in the thermoelectric performance for polycrystalline systems is expected. As the effect is marginally sensitive to the grain boundary type, we demonstrate that grain boundaries are a viable tool to greatly enhance the figure of merit, paving the way for the design of new thermoelectric materials.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Combined effect of strain and defects on the conductance of graphene nanoribbons

We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding model, the Landauer formalism, and the recursion method for Green functions. We calculate the conductance of graphene nanoribbons in the quantum coherent regime with different types and concentrations of defects. Further, we apply uniform planar tension to the nonideal graphene ribbons with randomly distributed and oriented single and double vacancies and Stone-Wales defects. Since transport characteristics of graphene nanoribbons are found to be very sensitive to edge termination and aspect ratio, and it has been shown that energy gaps can emerge under critical strain; the interplay of both effects needs to be studied. We show that band gap engineering using strain is still possible for nonideal armchair ribbons with a small defect concentration, as the oscillatory behavior of the gap is preserved.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Influencing the conductance in biphenyl-like molecular junctions with THz radiation

We investigate the torsional vibrations in biphenyl-like molecular junctions and transport properties in the presence of an external THz field. Ab-initio calculations including external electric fields show that the torsional angle ϕ of a thiolated biphenyl junction exhibits virtually no response. However, if functional groups are added to the molecule, creating a dipole moment in each of the rings, an external field becomes more effective for changing ϕ. A model based on the cos2ϕ dependence of the current is proposed for the biphenyl-like molecular junctions in presence of an external THz field including 2,2'-bipyridine, 3,3'-bipyridine and 2,2',4,4'- tetramethyl-3,3'-bipyridine. The current through these molecules is shown to change if the THz frequency gets in resonance to the torsional vibration mode.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Edge state effects in junctions with graphene electrodes

We consider plane junctions with graphene electrodes, which are formed by a single-level system ("molecule") placed between the edges of two single-layer graphene half planes. We calculate the edge Green functions of the electrodes and the corresponding lead self-energies for the molecular levels in the cases of semi-infinite single-layer electrodes with armchair and zigzag edges. We show two main effects: first, a peculiar energy-dependent level broadening, reflecting at low energies the linear energy dependence of the bulk density of states in graphene, and, second, the shift and splitting of the molecular level energy, especially pronounced in the case of the zigzag edges due to the influence of the edge states. These effects give rise to peculiar conductance features at finite bias and gate voltages.

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preprint2012arXiv

Many-body localized molecular orbital approach to molecular transport

An ab initio based theoretical approach to describe nonequilibrium many-body effects in molecular transport is developed. We introduce a basis of localized molecular orbitals and formulate the many-body model in this basis. In particular, the Hubbard-Anderson Hamiltonian is derived for single-molecule junctions with intermediate coupling to the leads. As an example we consider a benzenedithiol junction with gold electrodes. An effective few-level model is obtained, from which spectral and transport properties are computed and analyzed. Electron-electron interaction crucially affects transport and induces multiscale Coulomb blockade at low biases. At large bias, transport through asymmetrically coupled molecular edge states results in the occurrence of "anomalous" conductance features, i.e., of peaks with unexpectedly large/small height or even not located at the expected resonance energies.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Single-spin polaron memory effect

The single-spin memory effect is considered within a minimal polaron model describing a single-level quantum dot interacting with a vibron and weakly coupled to ferromagnetic leads. We show that in the case of strong electron-vibron and Coulomb interactions the rate of spontaneous quantum switching between two spin states is suppressed at zero bias voltage, but can be tuned through a wide range of finite switching timescales upon changing the bias. We further find that such junctions exhibit hysteretic behavior enabling controlled switching of a spin state. Spin lifetime, current and spin polarization are calculated as a function of the bias voltage by the master equation method. We also propose to use a third tunneling contact to control and readout the spin state.

0 citations0 reviewsNo code linkedOpen access