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Ding Pan

Ding Pan contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2026arXiv

Scalable Dielectric Tensor Predictions for Inorganic Materials using Equivariant Graph Neural Networks

Accurate prediction of dielectric tensors is essential for accelerating the discovery of next-generation inorganic dielectric materials. Existing machine learning approaches, such as equivariant graph neural networks, typically rely on specially-designed network architectures to enforce O(3) equivariance. However, to preserve equivariance, these specially-designed models restrict the update of equivariant features during message passing to linear transformations or gated equivariant nonlinearities. The inability to implicitly characterize more complex nonlinear structures may reduce the predictive accuracy of the model. In this study, we introduce a frame-averaging-based approach to achieve equivariant dielectric tensor prediction. We propose GoeCTP, an O(3)-equivariant framework that predicts dielectric tensors without imposing any structural restrictions on the backbone network. We benchmark its performance against several state-of-the-art models and further employ it for large-scale virtual screening of thermodynamically stable materials from the Materials Project database. GoeCTP successfully identifies various promising candidates, such as Zr(InBr$_3$)$_2$ (band gap $E_g = 2.41$ eV, dielectric constant $\overline{\varepsilon} = 194.72$) and SeI$_2$ (anisotropy ratio $α_r = 96.763$), demonstrating its accuracy and efficiency in accelerating the discovery of advanced inorganic dielectric materials.

preprint2022arXiv

Highly active hydrogen evolution facilitated by topological surface states on a Pd/SnTe metal/topological crystalline insulator heterostructure

Recently, topological quantum materials have emerged as a promising electrocatalyst for hydrogen evolution reaction (HER). However, most of their performance largely lags behind noble metals such as benchmark platinum (Pt). In this work, a Pd(20nm)/SnTe(70nm) heterostructure, fabricated by molecular beam epitaxy and electron beam evaporation, is found to display much higher electrocatalytic activity than that of a pure Pd(20nm) thin film and even higher than that of a commercial Pt foil. This heterostructure adopts an extracted turnover frequency value more than two times higher than that of the Pd(20nm) thin film at a potential of 0.2 V, indicating a much higher intrinsic activity per Pd site. Density functional theory calculations show that the conventional d-band theory, which works well for many transition metal heterostructures, cannot explain the enhancement of electrocatalytic performance. Instead, we found that the topological surface states (TSSs) of the SnTe (001) underlayer play a key role; electrons transfer from both the Pd surface and the adsorbed H atoms to the TSSs of SnTe (001), resulting in weaker Pd-H binding strength and more favorable hydrogen adsorption free energies. Our work demonstrates for the first time that a metal/topological quantum material heterostructure could be a prominent catalyst to enjoy HER activity outperforming that of a commercial Pt foil and offers a promising direction to optimize the performance of electrocatalysts based on topological quantum materials.

preprint2021arXiv

Bridging the gap between atomically thin semiconductors and metal leads

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC devices for exploring their unconventional physical properties and realizing potential electronic applications. Here we demonstrate a strategy to achieve nearly barrier-free electrical contacts with few-layer TMDSCs by engineering interfacial bonding distortion. The carrier-injection efficiency of such electrical junction is substantially increased with robust ohmic behaviors from room to cryogenic temperatures. The performance enhancements of TMDSC field-effect transistors are well reflected by the ultralow contact resistance (down to 90 Ohm um in MoS2, towards the quantum limit), the ultrahigh field-effect mobility (up to 358,000 cm2V-1s-1 in WSe2) and the prominent transport characteristics at cryogenic temperatures. This method also offers new possibilities of the local manipulation of structures and electronic properties for TMDSC device design.

preprint2020arXiv

Dielectric constant of supercritical water in a large pressure-temperature range

A huge amount of water at supercritical conditions exists in Earth's interior, where its dielectric properties play a critical role in determining how it stores and transports materials. However, it is very challenging to obtain the static dielectric constant of water, $ε_0$, in a wide pressure-temperature (P-T) range as found in deep Earth either experimentally or by first-principles simulations. Here, we introduce a neural network dipole model, which, combined with molecular dynamics, can be used to compute P-T dependent dielectric properties of water as accurately as first-principles methods but much more efficiently. We found that $ε_0$ may vary by one order of magnitude in Earth's upper mantle, suggesting that the solvation properties of water change dramatically at different depths. There is a subtle interplay between the molecular dipole moment and the dipolar angular correlation in governing the change of $ε_0$. We also calculated the frequency-dependent dielectric constant of water in the microwave range, which, to the best of our knowledge, has not been calculated from first principles, and found that temperature affects the dielectric absorption more than pressure. Our results are of great use in many areas, e.g., modelling water-rock interactions in geochemistry. The computational approach introduced here can be readily applied to other molecular fluids.