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Researcher profile

Didier Chaussende

Didier Chaussende contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Structure and morphology evolution of concave-shaped SiC {0001} surfaces in liquid silicon

Concave-shaped 4H-SiC {0001} surfaces have been prepared and reconstructed in pure liquid silicon for investigating the structure and morphology evolution of the SiC surface as a function of both azimuthal and off-axis angles. Different surface characteristics are revealed on two polar surfaces where only the Si face reflects the six-fold symmetry of 4H-SiC crystal. On the Si face, the step bunching along the <1100> direction is stronger than the <1120> direction, which is related to the bonding state at the step edge. More significant step bunching is observed on the C face whereas it is not sensitive to azimuthal orientation. The extent of step faceting is stronger on the Si face. The step faceting is independent of the off angle on both polarities of SiC {0001} surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study

In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this work, we present angle resolved photoemission spectroscopy (ARPES) data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low energy electron microscopy (LEEM) measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that on SiC substrates the occurrence of rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.

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preprint2013arXiv

Epitaxial graphene morphologies probed by weak (anti)-localization

We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the &#34;pure&#34; mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].

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preprint2011arXiv

Large area quasi-free standing monolayer graphene on 3C-SiC(111)

Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e. the 3C-SiC(111) surface, which represents an appealing and cost effective platform for graphene growth. The quasi-free monolayer is produced by intercalation of hydrogen under the interfacial, (6root3x6root3)R30-reconstructed carbon layer. After intercalation, angle resolved photoemission spectroscopy (ARPES) reveals sharp linear pi-bands. The decoupling of graphene from the substrate is identified by X-ray photoemission spectroscopy (XPS) and low energy electron diffraction (LEED). Atomic force microscopy (AFM) and low energy electron microscopy (LEEM) demonstrate that homogeneous monolayer domains extend over areas of hundreds of square-micrometers.

0 citations0 reviewsNo code linkedOpen access