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Di Yun

Di Yun contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

Radiation-tolerant high-entropy alloys via interstitial-solute-induced chemical heterogeneities

High-entropy alloys (HEAs) composed of multiple principal elements have been shown to offer improved radiation resistance over their elemental or dilute-solution counterparts. Using NiCoFeCrMn HEA as a model, here we introduce carbon and nitrogen interstitial alloying elements to impart chemical heterogeneities in the form of the local chemical order (LCO) and associated compositional variations. Density functional theory simulations predict chemical short-range order (CSRO) (nearest neighbors and the next couple of atomic shells) surrounding C and N, due to the chemical affinity of C with (Co, Fe) and N with (Cr, Mn). Atomic-resolution chemical mapping of the elemental distribution confirms marked compositional variations well beyond statistical fluctuations. Ni+ irradiation experiments at elevated temperatures demonstrate a remarkable reduction in void swelling by at least one order of magnitude compared to the base HEA without C and N alloying. The underlying mechanism is that the interstitial-solute-induced chemical heterogeneities roughen the lattice as well as the energy landscape, impeding the movements of, and constraining the path lanes for, the normally fast-moving self-interstitials and their clusters. The irradiation-produced interstitials and vacancies therefore recombine more readily, delaying void formation. Our findings thus open a promising avenue towards highly radiation-tolerant alloys.

preprint2012arXiv

Simulation of Ion Irradiation of Nuclear Materials and Comparison with Experiment

Radiation defects generated in various nuclear materials such as Mo and CeO2, used as a surrogate material for UO2, formed by sub-MeV Xe and Kr ion implantations were studied via TRIM and MD codes. Calculated results were compared with defect distributions in CeO2 crystals obtained from experiments by implantation of these ions at the doses of 1\times10^17 ions/cm2 at several temperatures. A combination of in situ TEM (Transmission Electron Microscopy) and ex situ TEM experiments on Mo were used to study the evolution of defect clusters during implantation of Xe and Kr ions at energies of 150-700 keV, depending on the experimental conditions. The simulation and irradiation were performed on thin film single crystal materials. The formation of defects, dislocations, and solid-state precipitates were studied by simulation and compared to experiment. Void and bubble formation rates are estimated based on a new mesoscale approach that combines experiment with the kinetic models validated by atomistic and Ab-initio simulations. Various sets of quantitative experimental results were obtained to characterize the dose and temperature effects of irradiation. These experimental results include size distributions of dislocation loops, voids and gas bubble structures created by irradiation.