BZPEERSource author record
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In this paper we consider a hybrid elastic model consisting of a Timoshenko beam and a tip load at the free end of the beam. Under the equal speed wave propagation condition, we show polynomial decay for the model which includes the rotary inertia of the tip load when feedback boundary moment and force controls are applied at the point of contact between the beam and the tip load.
We consider N strings connected to one another and forming a particular network which is a chain of strings. We study a stabilization problem and precisley we prove that the energy of the solutions of the dissipative system decay exponentially to zero when the time tends to infinity, independently of the densities of the strings. Our technique is based on a frequency domain method and a special analysis for the resolvent. Moreover, by same appraoch, we study the transfert function associated to the chain of strings and the stability of the Schrödinger system.
In this paper we consider second order evolution equations with unbounded dynamic feedbacks. Under a regularity assumption we show that observability properties for the undamped problem imply decay estimates for the damped problem. We consider both uniform and non uniform decay properties.
We report here the first realization of top-down silicon nanowires (SiNW) transduced by both junction-less field effect transistor (FET) and the piezoresistive (PZR) effect. The suspended SiNWs are among the smallest top-down SiNWs reported to date, featuring widths down to ~20nm. This has been achieved thanks to a 200mm-wafer-scale, VLSI process fully amenable to monolithic CMOS co-integration. Thanks to the very small dimensions, the conductance of the silicon nanowire can be controlled by a nearby electrostatic gate. Both the junction-less FET and the previously demonstrated PZR transduction have been performed with the same SiNW. These self-transducing schemes have shown similar signal-to-background ratios, and the PZR transduction has exhibited a relatively higher output signal. Allan deviation AD of the same SiNW has been measured with both schemes, and we obtain AD~20ppm for the FET detection and AD~3ppm for the PZR detection at room temperature and low pressure. Orders of magnitude improvements are expected from tighter electrostatic control via changes in geometry and doping level, as well as from CMOS integration. The compact, simple topology of these elementary SiNW resonators opens up new paths towards ultra-dense arrays for gas and mass sensing, time keeping or logic switching systems in SiNW-CMOS platform.
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