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Dengyang Guo

Dengyang Guo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Soliton disentangling and ferroelectric hysteresis in reconstructed moire superlattices

Moire materials, created by lattice-mismatch or/and twist-angle, have spurred great interest in excavating novel quantum phases of matter. Latterly, emergent interfacial ferroelectricity has been surprisingly found in spatial inversion symmetry broken systems, such as rhombohedral-stacked bilayer transition metal dichalcogenides (TMDs). However, the evolution of moire superlattices corresponding to polarization switching and hysteresis is still unclear, which is crucial for giving insight into the interplay between lattice symmetry and band topology, as well as developing optoelectronic memory devices. Here we report on the observation of phonon splitting at strain soliton networks in reconstructed moire superlattices, arising from the twisting and relaxing induced strong three-fold rotational symmetry (C3) breaking. The interval of phonon splitting is tunable by a perpendicular displacement field and exhibits ferroelectric-related hysteresis loops. These phonon evolution features are attributed to the contribution of moire solitons disentangling and lattice viscosity during the motion of domain walls. Moreover, we demonstrate a proof-of-principle moire ferroelectric tunneling junction, whose barrier is modified by net polarization with a tunneling electroresistance of ~10^4. Our work not only reveals the lattice dynamics of moire solitons but also presents a potential pathway for future ferroelectric-based optoelectronic memory devices.

preprint2020arXiv

Quantifying Charge Carrier Mobilities and Recombination Rates in Metal Halide Perovskites from Time-Resolved Microwave Photo-conductivity Measurements

The unprecedented rise in power conversion efficiency of solar cells based on metal halide perovskites (MHPs) has led to enormous research effort to understand their photo-physical properties. In this paper, we review the progress in understanding the mobility and recombination of photo-generated charge carriers from nanosecond to microsecond time scales, monitored using electrodeless transient photoconductivity techniques. In addition, we present a kinetic model to obtain rate constants from transient data recorded using a wide range of laser intensities. For various MHPs the temperature dependence of the mobilities and recombination rates are evaluated. Furthermore, we show how these rate constants can be used to predict the upper limit for the open-circuit voltage Voc of the corresponding device. Finally, we discuss photo-physical properties of MHPs that are not yet fully understood, and make recommendations for future research directions.