Researcher profile

David W. Abraham

David W. Abraham contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2013arXiv

Implementing a strand of a scalable fault-tolerant quantum computing fabric

Quantum error correction (QEC) is an essential step towards realising scalable quantum computers. Theoretically, it is possible to achieve arbitrarily long protection of quantum information from corruption due to decoherence or imperfect controls, so long as the error rate is below a threshold value. The two-dimensional surface code (SC) is a fault-tolerant error correction protocol} that has garnered considerable attention for actual physical implementations, due to relatively high error thresholds ~1%, and restriction to planar lattices with nearest-neighbour interactions. Here we show a necessary element for SC error correction: high-fidelity parity detection of two code qubits via measurement of a third syndrome qubit. The experiment is performed on a sub-section of the SC lattice with three superconducting transmon qubits, in which two independent outer code qubits are joined to a central syndrome qubit via two linking bus resonators. With all-microwave high-fidelity single- and two-qubit nearest-neighbour entangling gates, we demonstrate entanglement distributed across the entire sub-section by generating a three-qubit Greenberger-Horne-Zeilinger (GHZ) state with fidelity ~94%. Then, via high-fidelity measurement of the syndrome qubit, we deterministically entangle the otherwise un-coupled outer code qubits, in either an even or odd parity Bell state, conditioned on the syndrome state. Finally, to fully characterize this parity readout, we develop a new measurement tomography protocol to obtain a fidelity metric (90% and 91%). Our results reveal a straightforward path for expanding superconducting circuits towards larger networks for the SC and eventually a primitive logical qubit implementation.

preprint2013arXiv

Improved superconducting qubit coherence using titanium nitride

We demonstrate enhanced relaxation and dephasing times of transmon qubits, up to ~ 60 μs by fabricating the interdigitated shunting capacitors using titanium nitride (TiN). Compared to lift-off aluminum deposited simultaneously with the Josephson junction, this represents as much as a six-fold improvement and provides evidence that previous planar transmon coherence times are limited by surface losses from two-level system (TLS) defects residing at or near interfaces. Concurrently, we observe an anomalous temperature dependent frequency shift of TiN resonators which is inconsistent with the predicted TLS model.

preprint2011arXiv

Thermoelectric Spin-Transfer Torque MRAM with Sub-Nanosecond Bi-Directional Writing using Magnonic Current

A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic tunnel junction (MTJ), which is adjacent to a non-magnetic metallic and a ferrite film. This film stack is heated or cooled by a Peltier element which creates a bi-directional magnonic pulse in the ferrite film. Conversion of magnons to spin current occurs at the ferrite-metal interface, and the resulting spin-transfer torque is used to achieve sub-nanosecond precessional switching of the ferromagnetic free layer in the MTJ. Compared to electric current driven STT-MRAM with perpendicular magnetic anisotropy (PMA), thermoelectric STT-MRAM reduces the overall magnetization switching energy by more than 40% for nano-second switching, combined with a write error rate (WER) of less than 10-9 and a lifetime of 10 years or higher. The combination of higher thermal activation energy, sub-nanosecond read/write speed, improved tunneling magneto-resistance (TMR) and tunnel barrier reliability make thermoelectric STT-MRAM a promising choice for future non-volatile memory applications.