Researcher profile

David Soriano

David Soriano contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2014arXiv

Anomalous exchange interaction between intrinsic spins in conducting graphene systems

We address the nature and possible observable consequences of singular one-electron states that appear when strong defects are introduced in the metallic family of graphene, namely, metallic carbon nanotubes and nanotori. In its simplest form, after creating two defects on the same sublattice, a state may emerge at the Fermi energy presenting very unusual properties: It is unique, normalizable, and features a wave function equally distributed around both defects. As a result, the exchange coupling between the magnetic moments generated by the two defects is anomalous. The intrinsic spins couple ferromagnetically, as expected, but do not present an antiferromagnetic excited state at any distance. We propose the use of metallic carbon nanotubes as a novel electronic device based on this anomalous coupling between spins which can be useful for the robust transmission of magnetic information at large distances.

preprint2012arXiv

Three-dimensional Models of Topological Insulator Films: Dirac Cone Engineering and Spin Texture Robustness

We have designed three-dimensional models of topological insulator thin films, showing a tunability of the odd number of Dirac cones on opposite surfaces driven by the atomic-scale geometry at the boundaries. This enables creation of a single Dirac cone at the $Γ$-point as well as possible suppression of quantum tunneling between Dirac states at opposite surfaces (and gap formation), when opposite surfaces are geometrically differentiated. The spin texture of surface states was found to change from a spin-momentum-locking symmetry to a progressive loss in surface spin polarization upon the introduction of bulk disorder, related to the penetration of boundary states inside the bulk. These findings illustrate the richness of the Dirac physics emerging in thin films of topological insulators and may prove utile for engineering Dirac cones and for quantifying bulk disorder in materials with ultraclean surfaces.

preprint2011arXiv

Magnetoresistance and Magnetic Ordering Fingerprints in Hydrogenated Graphene

Spin-dependent features in the conductivity of graphene, chemically modified by a random distribution of hydrogen adatoms, are explored theoretically. The spin effects are taken into account using a mean-field self-consistent Hubbard model derived from first-principles calculations. A Kubo-Greenwood transport methodology is used to compute the spin-dependent transport fingerprints of weakly hydrogenated graphene-based systems with realistic sizes. Conductivity responses are obtained for paramagnetic, antiferromagnetic, or ferromagnetic macroscopic states, constructed from the mean-field solutions obtained for small graphene supercells. Magnetoresistance signals up to $\sim 7%$ are calculated for hydrogen densities around 0.25%. These theoretical results could serve as guidance for experimental observation of induced magnetism in graphene.