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David S. Ginger

David S. Ginger contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Hydration of a side-chain-free n-type semiconducting ladder polymer driven by electrochemical doping

We study the organic electrochemical transistors (OECTs) performance of the ladder polymer, poly(benzimidazobenzophenanthroline) (BBL) in an attempt to better understand how an apparently hydrophobic side-chain-free polymer is able to operate as an OECT with favorable redox kinetics in an aqueous environment. We examine two BBLs of different molecular masses from different sources. Both BBLs show significant film swelling during the initial reduction step. By combining electrochemical quartz crystal microbalance (eQCM) gravimetry, in-operando atomic force microscopy (AFM), and both ex-situ and in-operando grazing incidence wide-angle x-ray scattering (GIWAXS), we provide a detailed structural picture of the electrochemical charge injection process in BBL in the absence of any hydrophilic side-chains. Compared with ex-situ measurements, in-operando GIWAXS shows both more swelling upon electrochemical doping than has previously been recognized, and less contraction upon dedoping. The data show that BBL films undergo an irreversible hydration driven by the initial electrochemical doping cycle with significant water retention and lamellar expansion that persists across subsequent oxidation/reduction cycles. This swelling creates a hydrophilic environment that facilitates the subsequent fast hydrated ion transport in the absence of the hydrophilic side-chains used in many other polymer systems. Due to its rigid ladder backbone and absence of hydrophilic side-chains, the primary BBL water uptake does not significantly degrade the crystalline order, and the original dehydrated, unswelled state can be recovered after drying. The combination of doping induced hydrophilicity and robust crystalline order leads to efficient ionic transport and good stability.

preprint2020arXiv

Approaching the limits of optoelectronic performance in mixed cation mixed halide perovskites by controlling surface recombination

We demonstrate the critical role of surface recombination in mixed-cation, mixed-halide perovskite, FA0.83Cs0.17Pb(I0.85Br0.15)3. By passivating non-radiative defects with the polymerizable Lewis base (3-aminopropyl)trimethoxysilane (APTMS) we transform these thin films. We demonstrate average minority carrier lifetimes > 4 μs, nearly single exponential monomolecular PL decays, and concomitantly high external photoluminescence quantum efficiencies (>20%, corresponding to ~97% of the maximum theoretical quasi-Fermi-level splitting) at low excitation fluence. We confirm both the composition and valence band edge position of the FA0.83Cs0.17Pb(I0.85Br0.15)3 perovskite using multi-institution, cross-validated, XPS and UPS measurements. We extend the APTMS surface passivation to higher bandgap double cation (FA,Cs) compositions (1.7 eV, 1.75 eV and 1.8 eV) as well as the widely used triple cation (FA,MA,Cs) composition and observe significant PL and PL lifetime improvements after surface passivation. Finally, we demonstrate that the average surface recombination velocity (SRV) decreases from ~1000 cm/s to ~10 cm/s post APTMS passivation for FA0.83Cs0.17Pb(I0.85Br0.15)3. Our results demonstrate that surface-mediated recombination is the primary non-radiative loss pathway in MA-free mixed-cation mixed-halide films with a range of different bandgaps, which is a problem observed for a wide range of perovskite active layers and reactive electrical contacts. This study indicates that surface passivation and contact engineering will enable near-theoretical device efficiencies with these materials.

preprint2020arXiv

Sn4+ Precursor Enables 12.4% Efficient Kesterite Solar Cell from DMSO Solution with Open Circuit Voltage Deficit Below 0.30 V

The limiting factor preventing kesterite (CZTSSe) thin film solar cell performance further improvement is the large open-circuit voltage deficit (Voc,def) issue, which is 0.345V for the current world record device with an efficiency of 12.6%. In this work, SnCl4 and SnCl2_2H2O are respectively used as tin precursor to investigate the Voc,def issue of dimethyl sulfoxide (DMSO) solution processed CZTSSe solar cells. Different complexations of tin compounds with thiourea and DMSO lead to different reaction pathways from solution to absorber material and thus dramatic difference in photovoltaic performance. The coordination of Sn2+ with Tu leads to the formation of SnS and ZnS and Cu2S in the precursor film, which converted to selenides first and then fused to CZTSSe, resulting in poor film quality and device performance. The highest efficiency obtained from this film is 8.84% with a Voc,def of 0.391V. The coordination of Sn4+ with DMSO facilitates direct formation ofkesterite CZTS phase in the precursor film which directed converted to CZTSSe during selenization, resulting in compositional uniform absorber and high device performance. A device with active area efficiency 12.2% and a Voc,def of 0.344 V was achieved from Sn4+ solution processed absorber. Furthermore, CZTSSe/CdS heterojunction heat treatment (JHT) significantly improved Sn4+ device performance but had slightly negative effect on Sn2+ device. A champion CZTSSe solar cell with a total area efficiency of 12.4% (active are efficiency 13.6%) and low Voc,def of 0.297 V was achieved from Sn4+ solution. Our results demonstrate the preformed uniform kesterite phase enabled by Sn4+ precursor is the key in achieving highly efficient kesterite absorber material. The lowest Voc-def and high efficiency achieved here shines new light on the future of kesterite solar cell.