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David Nečas

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Published work

3 published item(s)

preprint2022arXiv

Self-organization phenomena in cold atmospheric pressure plasma slit jet

The RF plasma slit jet, which produces 150 mm wide streaming plasma outside the jet body, exhibits exciting self-organization phenomena that resemble the self-organized patterns of dielectric barrier discharge (DBD) filaments. Similarly, as in DBD, the filaments are surrounded by an inhibition zone that does not allow two filaments to come closer to each other. With fast camera imaging, we observed the filamentary character of the discharge in all the studied gas feeds (Ar, Ar/N$_2$, and Ar/O$_2$). Still, the visual appearance of the filaments in the plasma and their interaction with a dielectric surface depended significantly on the gas feed. As the breakdown voltage in pure Ar is relatively low compared to the applied one, new filaments form frequently. Such newly created filaments disrupted the characteristic inter-filament distance, forcing the system to rearrange. The frequent ignition and decay processes in Ar led to short filament lifetimes (0.020-0.035 s) and their high jitter speed (0.9-1.7 m/s), as determined with an image processing custom code based on Gwyddion libraries. The number of filaments was lower in the Ar/O$_2$ and Ar/N$_2$ mixtures. It was attributed to a loss of energy in the excitation of rotational and vibrational levels and oxygen electronegativity. Since the probability of low-current side discharges transitioning into the full plasma filaments was limited in the gas mixtures, the self-organized pattern was seldom disrupted, leading to lesser movement and longer lifetimes. Unlike in Ar or Ar/O$_2$, the constricted filaments in Ar/N$_2$ were surrounded by diffuse plasma plumes, likely connected to the presence of long-lived nitrogen species. We demonstrated in the polypropylene treatment that the self-organization phenomena affected the treatment uniformity.

preprint2020arXiv

Estimation of roughness measurement bias originating from background subtraction

When measuring the roughness of rough surfaces, the limited sizes of scanned areas lead to its systematic underestimation. Levelling by polynomials and other filtering used in real-world processing of atomic force microscopy data increases this bias considerably. Here a framework is developed providing explicit expressions for the bias of squared mean square roughness in the case of levelling by fitting a model background function using linear least squares. The framework is then applied to polynomial levelling, for both one-dimensional and two-dimensional data processing, and basic models of surface autocorrelation function, Gaussian and exponential. Several other common scenarios are covered as well, including median levelling, intermediate Gaussian--exponential autocorrelation model and frequency space filtering. Application of the results to other quantities, such as Rq, Sq, Ra and~Sa is discussed. The results are summarized in overview plots covering a range of autocorrelation functions and polynomial degrees, which allow graphical estimation of the bias.

preprint2016arXiv

Accurate prediction of band gaps and optical properties of HfO$_2$

We report on optical properties of various polymorphs of hafnia predicted within the framework of density functional theory. The full potential linearised augmented plane wave method was employed together with the Tran-Blaha modified Becke-Johnson potential for exchange and local density approximation for correlation. Unit cells of monoclinic, cubic, and tetragonal crystalline, and a simulated annealing-based model of amorphous hafnia were fully relaxed with respect to internal positions and lattice parameters. The thus obtained band gaps of 5.76 eV, 5.88 eV, 6.54 eV, and 5.5 eV for monoclinic, cubic, tetragonal, and amorphous hafnia, respectively, are in excellent agreement with available experimental data. Dielectric functions were calculated and a shift of spectral weights to higher energies with respect to experimental data was predicted. This was attributed to the random phase approximation used to calculate the dielectric function, rather than inaccuracies in the band structure.