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Researcher profile

David N. Seidman

David N. Seidman contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.supr-conphysics.acc-phphysics.comp-ph

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Published work

3 published item(s)

preprint2026arXiv

Oxygen distribution and segregation at grain boundaries in Nb and Ta-encapsulated Nb thin films for superconducting qubits

We report on atomic-scale analyses of oxygen distribution and segregation at grain boundaries (GBs) of Nb and Ta-encapsulated Nb (Ta/Nb) thin films for superconducting qubits using atom-probe tomography (APT) and transmission electron microscopy (TEM). We observe oxygen segregation at grain boundaries (GBs) relative to the oxygen concentration within the grains for both Nb and Ta-capped Nb thin films for superconducting qubits and find that higher oxygen concentration in the interior of Nb grains lead to greater oxygen segregation levels at GBs. This finding emphasizes that controlling oxygen impurities in Nb during film deposition and fabrication processing is important to reduce the level of oxygen segregation at GBs in Nb. The enrichment factor (Cgb/Cgrain) for oxygen segregation at GBs in Nb is 2.7 (error bar: 0.3) for Nb films, and Ta-capped Nb thin films exhibit slightly reduced Nb GB enrichment factors of 2.3 (error bar: 0.3) while GBs in the Ta capping layer itself possess higher enrichment factors of 3.0 (error bar: 0.3). We hypothesize that the Ta capping layer can trap oxygen and thereby affect oxygen in-diffusion and segregation at GBs in the underlying Nb thin films. Finally, we find that increases in the oxygen concentration in both Nb grains and GBs correlate with a suppression in the critical temperature for superconductivity (Tc). Together, our comparative chemical and charge transport property analyses provide atomic-scale insights into a potential mechanism contributing to decoherence in superconducting qubits.

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preprint2020arXiv

An integral method for the calculation of the reduction in interfacial free energy due to interfacial segregation

A method based on the Gibbs' adsorption isotherm is developed to calculate the decrease in interfacial free energy resulting from solute segregation at an internal interface, built on measured concentration profiles. Utilizing atom-probe tomography (APT), we first measure a concentration profile of the relative interfacial excess of solute atoms across an interface. To accomplish this we utilize a new method based on J. W. Cahn's formalism for the calculation of the Gibbs interfacial excess. We also introduce a method to calculate the decrease in interfacial free energy that is caused by the segregating solute atoms. This method yields a discrete profile of the decrease in interfacial free energies, which takes into account the measured concentration profile and calculated Gibbsian excess profile. We demonstrate that this method can be used for both homo- and hetero-phase interfaces and takes into account the actual distribution of solute atoms across an interface as determined by APT. It is applied to the case of the semiconducting system PbTe-PbS 12 mol.%-Na 1 mol.%, where Na segregation at the PbS/PbTe interface is anticipated to reduce the interfacial free energy of the {100} facets. We also consider the case of the nickel-based Alloy 600, where B and Si segregation are suspected to impede inter-granular stress corrosion cracking (IGSCC) at homo- (GB) and hetero-phase metal carbide (M7C3) interfaces. The concentration profiles associated with internal interfaces are measured by APT using an ultraviolet (wavelength = 355 nm) laser to dissect nanotips on an atom-by-atom and atomic plane-by-plane basis.

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preprint2020arXiv

Analysis of Magnetic Vortex Dissipation in Sn-Segregated Boundaries in Nb$_3$Sn Superconducting RF Cavities

We study mechanisms of vortex nucleation in Nb$_3$Sn Superconducting RF (SRF) cavities using a combination of experimental, theoretical, and computational methods. Scanning transmission electron microscopy (STEM) image and energy dispersive spectroscopy (EDS) of some Nb$_3$Sn cavities show Sn segregation at grain boundaries in Nb$_3$Sn with Sn concentration as high as $\sim$35 at.\% and widths $\sim$3 nm in chemical composition. Using ab initio calculations, we estimate the effect excess tin has on the local superconducting properties of the material. We model Sn segregation as a lowering of the local critical temperature. We then use time-dependent Ginzburg-Landau theory to understand the role of segregation on magnetic vortex nucleation. Our simulations indicate that the grain boundaries act as both nucleation sites for vortex penetration and pinning sites for vortices after nucleation. Depending on the magnitude of the applied field, vortices may remain pinned in the grain boundary or penetrate the grain itself. We estimate the superconducting losses due to vortices filling grain boundaries and compare with observed performance degradation with higher magnetic fields. We estimate that the quality factor may decrease by an order of magnitude ($10^{10}$ to $10^9$) at typical operating fields if 0.03\% of the grain boundaries actively nucleate vortices. We additionally estimate the volume that would need to be filled with vortices to match experimental observations of cavity heating.

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