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Source author record

David J. van Woerkom

David J. van Woerkom appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.supr-concond-mat.mtrl-sciquant-ph

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Published work

4 published item(s)

preprint2020arXiv

A gate-tunable, field-compatible fluxonium

Circuit quantum electrodynamics, where photons are coherently coupled to artificial atoms built with superconducting circuits, has enabled the investigation and control of macroscopic quantum-mechanical phenomena in superconductors. Recently, hybrid circuits incorporating semiconducting nanowires and other electrostatically-gateable elements have provided new insights into mesoscopic superconductivity. Extending the capabilities of hybrid flux-based circuits to work in magnetic fields would be especially useful both as a probe of spin-polarized Andreev bound states and as a possible platform for topological qubits. The fluxonium is particularly suitable as a readout circuit for topological qubits due to its unique persistent-current based eigenstates. In this Letter, we present a magnetic-field compatible hybrid fluxonium with an electrostatically-tuned semiconducting nanowire as its non-linear element. We operate the fluxonium in magnetic fields up to 1T and use it to observe the $φ_0$-Josephson effect. This combination of gate-tunability and field-compatibility opens avenues for the exploration and control of spin-polarized phenomena using superconducting circuits and enables the use of the fluxonium as a readout device for topological qubits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Observation of the 4$π$-periodic Josephson effect in indium arsenide nanowires

Quantum computation by non-Abelian Majorana zero modes (MZMs) offers an approach to achieve fault tolerance by encoding quantum information in the non-local charge parity states of semiconductor nanowire networks in the topological superconductor regime. Thus far, experimental studies of MZMs chiefly relied on single electron tunneling measurements which leads to decoherence of the quantum information stored in the MZM. As a next step towards topological quantum computation, charge parity conserving experiments based on the Josephson effect are required, which can also help exclude suggested non-topological origins of the zero bias conductance anomaly. Here we report the direct measurement of the Josephson radiation frequency in InAs nanowires with epitaxial aluminium shells. For the first time, we observe the $4π$-periodic Josephson effect above a magnetic field of $\approx 200\,$mT, consistent with the estimated and measured topological phase transition of similar devices.

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preprint2015arXiv

1 minute parity lifetime of a NbTiN Cooper-pair transistor

The parity modulation of the ground state of a superconducting island is a direct consequence of the presence of the Cooper pair condensate preferring an even number of charge carriers. The addition energy of an odd, unpaired quasiparticle equals to the superconducting gap, $Δ$, suppressing single electron hopping in the low temperature limit. Controlling the quasiparticle occupation is of fundamental importance for superconducting qubits as single electron tunneling results in decoherence. In particular, topological quantum computation relies on the parity control and readout of Majorana bound states. Here we present parity modulation for the first time of a niobium titanite nitride (NbTiN) Cooper-pair transistor coupled to aluminium (Al) leads. We show that this circuit is compatible with the magnetic field requirement in the range of 100 mT of inducing topological superconductivity in spin-orbit coupled nanowires. Our observed parity lifetime exceeding 1 minute is several orders of magnitude higher than the required gate time of flux-controlled braiding of Majorana states. Our findings readily demonstrate that a NbTiN island can be parity-controlled and therefore provides a good platform for superconducting coherent circuits operating in a magnetic field.

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preprint2015arXiv

Towards high mobility InSb nanowire devices

We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model enables an accurate extraction of device parameters, thereby allowing for a systematic study of the nanowire mobility. We identify factors affecting the mobility, and after optimization obtain a field effect mobility of $\sim2.5\mathbin{\times}10^4$ cm$^2$/Vs. We further demonstrate the reproducibility of these mobility values which are among the highest reported for nanowires. Our investigations indicate that the mobility is currently limited by adsorption of molecules to the nanowire surface and/or the substrate.

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