Researcher profile

Dario Arena

Dario Arena contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2014arXiv

Critical phenomena of nano phase evolution in a first order transition

First order phase transitions occur discretely from one state to another, however they often display continuous behavior. To understand this nature, it is essential to probe how the emergent phase nucleates, interacts and evolves with the initial phase across the transition at microscopic scales. Here, the prototypical first-order magneto-structural transition in FeRh is used to investigate these phenomena. We find that the temperature evolution of the final phase exhibits critical behavior. Furthermore, a difference between the structure and magnetic transition temperatures reveals a novel intermediate phase created from the interface between the initial and nucleated final states. This emergent phase, characterized by its lack of spin order due to the competition between the antiferromagnetic and ferromagnetic interactions, leads to suppression of the dynamic aspect of the transition, generating a static mixed-phase-morphology. Understanding and controlling the transition process at this spatial scale is critical to optimizing functional device capabilities.

preprint2013arXiv

Interface characterization of Co2MnGe/Rh2CuSn Heusler multilayers

All-Heusler multilayer structures have been investigated by means of high kinetic x-ray photoelectron spectroscopy and x-ray magnetic circular dichroism, aiming to address the amount of disorder and interface diffusion induced by annealing of the multilayer structure. The studied multilayers consist of ferromagnetic Co$_2$MnGe and non-magnetic Rh$_2$CuSn layers with varying thicknesses. We find that diffusion begins already at comparably low temperatures between 200 $^{\circ}$C and 250 $^{\circ}$C, where Mn appears to be most prone to diffusion. We also find evidence for a 4 Å thick magnetically dead layer that, together with the identified interlayer diffusion, are likely reasons for the small magnetoresistance found for current-perpendicular-to-plane giant magneto-resistance devices based on this all-Heusler system.